Datasheet IRLL110, SiHLL110 (Vishay) - 2

IRLL110, SiHLL110
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient  (PCB Mount) a RthJA - 60 °C/W Maximum Junction-to-Case (Drain) RthJC - 40
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 250 VGS = 5.0 V ID = 0.90 Ab - - 0.54 Drain-Source On-State Resistance R DS(on) VGS = 4.0 V ID = 0.75 A - - 0.76 Forward Transconductance gfs VDS = 25 V, ID = 0.90 A 0.57 - - S
Dynamic
Input Capacitance Ciss V - 250 - GS = 0 V, Output Capacitance Coss VDS = 25 V, - 80 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 15 - Total Gate Charge Qg - - 6.1 I Gate-Source Charge Qgs V D = 5.6 A, VDS = 80 V, GS = 5.0 V - - 2.6 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 3.3 Turn-On Delay Time td(on) - 9.3 - Rise Time tr V - 47 - DD = 50 V, ID = 5.6 A, ns R Turn-Off Delay Time t g = 12 , RD = 8.4 d(off) - 16 - Fall Time tf - 18 - Between lead, D Internal Drain Inductance LD - 4.0 - 6 mm (0.25") from package and center of nH G Internal Source Inductance L die contact S - 6.0 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 1.5 showing the  integral reverse A G Pulsed Diode Forward Current a ISM p - n junction diode - - 12 S Body Diode Voltage VSD TJ = 25 °C, IS = 1.5 A, VGS = 0 Vb - - 2.5 V Body Diode Reverse Recovery Time trr - 110 130 ns TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 0.50 0.65 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S15-1195-Rev. F, 25-May-15
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