Datasheet SBR10M100P5Q (Diodes) - 2
| Manufacturer | Diodes |
| Description | Surface Mount Schottky Barrier Diode |
| Pages / Page | 6 / 2 — SBR10M100P5Q. Maximum Ratings. Characteristic. Symbol. Value. Unit. … |
| File Format / Size | PDF / 494 Kb |
| Document Language | English |
SBR10M100P5Q. Maximum Ratings. Characteristic. Symbol. Value. Unit. Ratings. Thermal Characteristics. Electrical Characteristics. Min. Typ
Model Line for this Datasheet
Text Version of Document
SBR10M100P5Q Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage VRRM 100 V DC Blocking Voltage Average Rectified Output Current IO 10 A Non-Repetitive Peak Forward Surge Current 8.3mS IFSM 220 A Non-Repetitive Avalanche Energy at IAS = 5.0A, L = 50mH EAS 400 mJ Non-Repetitive Avalanche Energy at IAS = 20.0A, L = 1mH EAS 150 mJ
Characteristic Symbol Ratings Unit
Human Body Model ESD Protection ESD HBM 4000 V Machine Model ESD Protection ESD MM 400 V Charged Device Model ESD CDM 1 kV
Thermal Characteristics Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Lead (Cathode) RθJL 3 °C/W Typical Thermal Resistance Junction to Ambient (Note 7) RθJA 20 °C/W Typical Thermal Resistance Junction to Ambient (Note 8) RθJA 90 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
— 0.56 — IF = 1A, TJ = +25°C — 0.71 — IF = 5A, TJ = +25°C Forward Voltage Drop V — F 0.78 0.88 V IF = 10A, TJ = +25°C — 0.59 — IF = 5A, TJ = +125°C — 0.65 0.74 IF = 10A, TJ = +125°C — 100 2000 nA VR = 100V, TJ = +25°C Leakage Current (Note 9) I — R 0.015 0.1 mA VR = 100V, TJ = +125°C — 0.060 — mA VR = 100V, TJ = +150°C Junction Capacitance CJ — 245 — pF VR = 4V, TJ = +25°C Switching Speed tRR tRR — 18 — ns IF=0.5A, IR=1A, IRR=0.25A (RG1) Notes: 7. 2inch sq. Al board. 8. MRP FR-4 PC board, 2oz. 9. Short duration pulse test used to minimize self-heating effect. SBR10M100P5Q 2 of 6 September 2018 Document number:DS40876 Rev. 3 - 2
www.diodes.com
© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage VRRM 100 V DC Blocking Voltage Average Rectified Output Current IO 10 A Non-Repetitive Peak Forward Surge Current 8.3mS IFSM 220 A Non-Repetitive Avalanche Energy at IAS = 5.0A, L = 50mH EAS 400 mJ Non-Repetitive Avalanche Energy at IAS = 20.0A, L = 1mH EAS 150 mJ
Characteristic Symbol Ratings Unit
Human Body Model ESD Protection ESD HBM 4000 V Machine Model ESD Protection ESD MM 400 V Charged Device Model ESD CDM 1 kV
Thermal Characteristics Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Lead (Cathode) RθJL 3 °C/W Typical Thermal Resistance Junction to Ambient (Note 7) RθJA 20 °C/W Typical Thermal Resistance Junction to Ambient (Note 8) RθJA 90 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
— 0.56 — IF = 1A, TJ = +25°C — 0.71 — IF = 5A, TJ = +25°C Forward Voltage Drop V — F 0.78 0.88 V IF = 10A, TJ = +25°C — 0.59 — IF = 5A, TJ = +125°C — 0.65 0.74 IF = 10A, TJ = +125°C — 100 2000 nA VR = 100V, TJ = +25°C Leakage Current (Note 9) I — R 0.015 0.1 mA VR = 100V, TJ = +125°C — 0.060 — mA VR = 100V, TJ = +150°C Junction Capacitance CJ — 245 — pF VR = 4V, TJ = +25°C Switching Speed tRR tRR — 18 — ns IF=0.5A, IR=1A, IRR=0.25A (RG1) Notes: 7. 2inch sq. Al board. 8. MRP FR-4 PC board, 2oz. 9. Short duration pulse test used to minimize self-heating effect. SBR10M100P5Q 2 of 6 September 2018 Document number:DS40876 Rev. 3 - 2
www.diodes.com
© Diodes Incorporated
