Datasheet IRF7832TRPBF (Infineon) - 3
| Manufacturer | Infineon |
| Description | HEXFET Power MOSFET |
| Pages / Page | 10 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| File Format / Size | PDF / 269 Kb |
| Document Language | English |
Fig 1. Fig 2. Fig 3. Fig 4
Model Line for this Datasheet
Text Version of Document
IRF7832PbF 1000 1000 VGS VGS TOP 10V TOP 10V 5.0V ) 5.0V A 100 4.5V ) ( 4.5V A t 3.5V ( 3.5V n 3.0V t e n 3.0V rr 2.7V er 2.7V u 2.5V r 100 2.5V C u 10 BOTTOM 2.25V C BOTTOM 2.25V e c e r c u r o u S o - S o 1 - t- ot ni - a ni 10 r 2.25V a D r 2.25V , D 0.1 , I D I D 20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.01 1 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 ecn ID = 16A a ) ts V Α is GS = 4.5V ( e t 100 n R 1.5 er n r TJ = 150°C O u C e c e r ) c u d r o e u 10 S zi 1.0 o - l S a - T ot m o - t J = 25°C r - ni o ni ar N( a r D D 1 , 0.5 , ) n I D V o DS = 15V ( S 20µs PULSE WIDTH D R 0 0.0 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 V T GS, Gate-to-Source Voltage (V) J, Junction Temperature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 ecn ID = 16A a ) ts V Α is GS = 4.5V ( e t 100 n R 1.5 er n r TJ = 150°C O u C e c e r ) c u d r o e u 10 S zi 1.0 o - l S a - T ot m o - t J = 25°C r - ni o ni ar N( a r D D 1 , 0.5 , ) n I D V o DS = 15V ( S 20µs PULSE WIDTH D R 0 0.0 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 V T GS, Gate-to-Source Voltage (V) J, Junction Temperature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3
