Datasheet PZT2907A (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | PNP Bipolar Transistor |
| Pages / Page | 4 / 1 — http://onsemi.com. Features. SOT−223. CASE 318E. STYLE 1. MAXIMUM … |
| Revision | 10 |
| File Format / Size | PDF / 105 Kb |
| Document Language | English |
http://onsemi.com. Features. SOT−223. CASE 318E. STYLE 1. MAXIMUM RATINGS. MARKING DIAGRAM. Rating. Symbol. Value. Unit
Model Line for this Datasheet
Text Version of Document
link to page 1 link to page 1 PZT2907A PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
http://onsemi.com Features
4 • NPN Complement is PZT2222AT1 1 2 • 3 The SOT-223 Package can be Soldered Using Wave or Reflow
SOT−223
• SOT-223 Package Ensures Level Mounting, Resulting in Improved
CASE 318E
Thermal Conduction, and Allows Visual Inspection of Soldered
STYLE 1
Joints. The Formed Leads Absorb Thermal Stress during Soldering COLLECTOR Eliminating the Possibility of Damage to the Die 2, 4 • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and 1 PPAP Capable BASE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 3 EMITTER
MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −60 Vdc AYW Collector−Base Voltage VCBO −60 Vdc P2F G Emitter−Base Voltage V G EBO −5.0 Vdc 1 Collector Current − Continuous IC −600 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum P2F = Specific Device Code Ratings are stress ratings only. Functional operation above the Recommended A = Assembly Location Operating Conditions is not implied. Extended exposure to stresses above the Y = Year Recommended Operating Conditions may affect device reliability. W = Work Week G = Pb−Free Package
THERMAL CHARACTERISTICS
(Note: Microdot may be in either location)
Characteristic Symbol Max Unit ORDERING INFORMATION
Total Device Dissipation (Note 1) PD 1.5 W T
Device Package Shipping
† A = 25°C 12 mW/°C Thermal Resistance Junction−to−Ambient R PZT2907AT1G SOT−223 1,000 / Tape & Reel qJA 83.3 °C/W (Note 1) (Pb−Free) Lead Temperature for Soldering, TL SPZT2907AT1G SOT−223 1,000 / Tape & Reel 0.0625″ from case 260 °C (Pb−Free) Time in Solder Bath 10 Sec Operating and Storage Temperature Range T PZT2907AT3G SOT−223 4,000 / Tape & Reel J, Tstg −65 to °C +150 (Pb−Free) 1. FR−4 with 1 oz and 713 mm2 of copper area. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013 − Rev. 10 PZT2907AT1/D
http://onsemi.com Features
4 • NPN Complement is PZT2222AT1 1 2 • 3 The SOT-223 Package can be Soldered Using Wave or Reflow
SOT−223
• SOT-223 Package Ensures Level Mounting, Resulting in Improved
CASE 318E
Thermal Conduction, and Allows Visual Inspection of Soldered
STYLE 1
Joints. The Formed Leads Absorb Thermal Stress during Soldering COLLECTOR Eliminating the Possibility of Damage to the Die 2, 4 • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and 1 PPAP Capable BASE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 3 EMITTER
MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −60 Vdc AYW Collector−Base Voltage VCBO −60 Vdc P2F G Emitter−Base Voltage V G EBO −5.0 Vdc 1 Collector Current − Continuous IC −600 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum P2F = Specific Device Code Ratings are stress ratings only. Functional operation above the Recommended A = Assembly Location Operating Conditions is not implied. Extended exposure to stresses above the Y = Year Recommended Operating Conditions may affect device reliability. W = Work Week G = Pb−Free Package
THERMAL CHARACTERISTICS
(Note: Microdot may be in either location)
Characteristic Symbol Max Unit ORDERING INFORMATION
Total Device Dissipation (Note 1) PD 1.5 W T
Device Package Shipping
† A = 25°C 12 mW/°C Thermal Resistance Junction−to−Ambient R PZT2907AT1G SOT−223 1,000 / Tape & Reel qJA 83.3 °C/W (Note 1) (Pb−Free) Lead Temperature for Soldering, TL SPZT2907AT1G SOT−223 1,000 / Tape & Reel 0.0625″ from case 260 °C (Pb−Free) Time in Solder Bath 10 Sec Operating and Storage Temperature Range T PZT2907AT3G SOT−223 4,000 / Tape & Reel J, Tstg −65 to °C +150 (Pb−Free) 1. FR−4 with 1 oz and 713 mm2 of copper area. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013 − Rev. 10 PZT2907AT1/D
