Datasheet RH1013M (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Dual Precision Operational Amplifier |
| Pages / Page | 6 / 3 — TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation). VS = ±15V, VCM = … |
| Revision | F |
| File Format / Size | PDF / 169 Kb |
| Document Language | English |
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation). VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted
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RH1013M
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 450 450 600 750 900 µV 2 600 600 750 900 µV IOS Input Offset Current 10 10 15 20 25 nA 2 10 10 15 20 nA IB Input Bias Current 60 75 100 175 250 nA 2 80 100 125 200 nA Input Voltage Range 1 13.5 13.5 13.5 13.5 13.5 V 1 –15.0 –15.0 –15.0 –15.0 –15.0 V 2 3.5 3.5 3.5 3.5 V 2 0 0 0 0 V CMRR Common-Mode VCM = 13V, – 15V 97 97 94 90 86 dB Rejection Ratio PSRR Power Supply VS = ±10V to ±18V 100 98 94 86 80 dB Rejection Ratio AVOL Large-Signal RL ≥ 10k, VO = ±10V 500 200 100 50 25 V/mV Voltage Gain VOUT Maximum Output RL ≥ 10k ±12.5 ±12.5 ±12.5 ±12.5 ±12.5 V Voltage Swing Output Low, No Load 2 25 30 40 50 mV Output Low, 600Ω to GND 2 10 10 10 10 mV Output Low, ISINK = 1mA 2 0.6 0.8 1.0 1.6 V Output High, No Load 2 4.0 4.0 4.0 4.0 V Output High, 600Ω to GND 2 3.4 3.2 3.0 2.8 V SR Slew Rate RL ≥ 10k 0.13 0.12 0.11 0.07 0.01 V/µs IS Supply Current Per Amplifier 0.55 0.55 0.55 0.55 0.55 mA 2 0.50 0.50 0.50 0.50 mA
Note 1:
Guaranteed by design, characterization, or correlation to other
Note 2:
Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V, tested parameters. VOUT = 1.4V.
TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP PDA Test Notes
Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method Group A Test Requirements (Method 5005) 1,2,3,4,5,6 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after Group B and D for Class S, and 1,2,3 burn-in divided by the total number of devices submitted for burn-in in Group C and D for Class B that lot shall be used to determine the percent for the lot. End Point Electrical Parameters (Method 5005) Analog Devices, Inc. reserves the right to test to tighter limits than those * PDA applies to subgroup 1. See PDA Test Notes. given. Rev. F For more information www.analog.com 3 Document Outline Description Burn-In Circuit Package/Order Information Absolute Maximum Ratings Total Dose Bias Circuit Table 1: Electrical characteristics Table 1a: Electrical characteristics Table 2: Electrical Test Requirements Typical Performance Characteristics Revision History Rad Hard
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 450 450 600 750 900 µV 2 600 600 750 900 µV IOS Input Offset Current 10 10 15 20 25 nA 2 10 10 15 20 nA IB Input Bias Current 60 75 100 175 250 nA 2 80 100 125 200 nA Input Voltage Range 1 13.5 13.5 13.5 13.5 13.5 V 1 –15.0 –15.0 –15.0 –15.0 –15.0 V 2 3.5 3.5 3.5 3.5 V 2 0 0 0 0 V CMRR Common-Mode VCM = 13V, – 15V 97 97 94 90 86 dB Rejection Ratio PSRR Power Supply VS = ±10V to ±18V 100 98 94 86 80 dB Rejection Ratio AVOL Large-Signal RL ≥ 10k, VO = ±10V 500 200 100 50 25 V/mV Voltage Gain VOUT Maximum Output RL ≥ 10k ±12.5 ±12.5 ±12.5 ±12.5 ±12.5 V Voltage Swing Output Low, No Load 2 25 30 40 50 mV Output Low, 600Ω to GND 2 10 10 10 10 mV Output Low, ISINK = 1mA 2 0.6 0.8 1.0 1.6 V Output High, No Load 2 4.0 4.0 4.0 4.0 V Output High, 600Ω to GND 2 3.4 3.2 3.0 2.8 V SR Slew Rate RL ≥ 10k 0.13 0.12 0.11 0.07 0.01 V/µs IS Supply Current Per Amplifier 0.55 0.55 0.55 0.55 0.55 mA 2 0.50 0.50 0.50 0.50 mA
Note 1:
Guaranteed by design, characterization, or correlation to other
Note 2:
Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V, tested parameters. VOUT = 1.4V.
TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP PDA Test Notes
Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method Group A Test Requirements (Method 5005) 1,2,3,4,5,6 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after Group B and D for Class S, and 1,2,3 burn-in divided by the total number of devices submitted for burn-in in Group C and D for Class B that lot shall be used to determine the percent for the lot. End Point Electrical Parameters (Method 5005) Analog Devices, Inc. reserves the right to test to tighter limits than those * PDA applies to subgroup 1. See PDA Test Notes. given. Rev. F For more information www.analog.com 3 Document Outline Description Burn-In Circuit Package/Order Information Absolute Maximum Ratings Total Dose Bias Circuit Table 1: Electrical characteristics Table 1a: Electrical characteristics Table 2: Electrical Test Requirements Typical Performance Characteristics Revision History Rad Hard
