Datasheet BC846BPN (NXP) - 8
| Manufacturer | NXP |
| Description | 65 V, 100 mA NPN/PNP general-purpose transistor |
| Pages / Page | 15 / 8 — NXP Semiconductors. BC846BPN. 65 V, 100 mA NPN/PNP general-purpose … |
| File Format / Size | PDF / 133 Kb |
| Document Language | English |
NXP Semiconductors. BC846BPN. 65 V, 100 mA NPN/PNP general-purpose transistor. Fig 9. TR1 (NPN): Collector capacitance as a
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NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor
006aab620 006aaa539 6 15 Ce Cc (pF) (pF) 13 4 11 9 2 7 0 5 0 2 4 6 8 10 0 2 4 6 VCB (V) VEB (V) f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C
Fig 9. TR1 (NPN): Collector capacitance as a Fig 10. TR1 (NPN): Emitter capacitance as a function function of collector-base voltage; typical of emitter-base voltage; typical values values
006aaa541 006aaa540 600 −0.20 IB (mA) = −2.5 IC −2.25 h (A) FE −2.0 −0.16 −1.75 (1) −1.5 −1.25 400 −0.12 −1.0 (2) −0.75 −0.08 −0.5 200 (3) −0.25 −0.04 0 0 −10−2 −1 −103 −102 −10−1 −10 0 −2 −4 −6 −8 −10 IC (mA) VCE (V) VCE = −5 V Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 11. TR2 (PNP): DC current gain as a function of Fig 12. TR2 (PNP): Collector current as a function of collector current; typical values collector-emitter voltage; typical values
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 8 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
006aab620 006aaa539 6 15 Ce Cc (pF) (pF) 13 4 11 9 2 7 0 5 0 2 4 6 8 10 0 2 4 6 VCB (V) VEB (V) f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C
Fig 9. TR1 (NPN): Collector capacitance as a Fig 10. TR1 (NPN): Emitter capacitance as a function function of collector-base voltage; typical of emitter-base voltage; typical values values
006aaa541 006aaa540 600 −0.20 IB (mA) = −2.5 IC −2.25 h (A) FE −2.0 −0.16 −1.75 (1) −1.5 −1.25 400 −0.12 −1.0 (2) −0.75 −0.08 −0.5 200 (3) −0.25 −0.04 0 0 −10−2 −1 −103 −102 −10−1 −10 0 −2 −4 −6 −8 −10 IC (mA) VCE (V) VCE = −5 V Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 11. TR2 (PNP): DC current gain as a function of Fig 12. TR2 (PNP): Collector current as a function of collector current; typical values collector-emitter voltage; typical values
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 8 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
