Datasheet BC846BDW1, BC847BDW1, BC848CDW1 (ON Semiconductor) - 7
| Manufacturer | ON Semiconductor |
| Description | Dual NPN Bipolar Transistor |
| Pages / Page | 11 / 7 — BC846BDW1, BC847BDW1, BC848CDW1. TYPICAL CHARACTERISTICS − BC848CDW1. … |
| Revision | 11 |
| File Format / Size | PDF / 107 Kb |
| Document Language | English |
BC846BDW1, BC847BDW1, BC848CDW1. TYPICAL CHARACTERISTICS − BC848CDW1. Figure 23. DC Current Gain at VCE = 5 V
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BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC848CDW1
1000 1000 VCE = 5 V 150°C VCE = 10 V 900 150°C 900 800 800 700 700 600 25°C 600 25°C 500 500 400 400 −55°C −55°C 300 , DC CURRENT GAIN 300 , DC CURRENT GAIN FE FE h 200 h 200 100 100 0 0 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 23. DC Current Gain at VCE = 5 V Figure 24. DC Current Gain at VCE = 10 V
0.20 0.30 I I AGE (V) C/IB = 10 C/IB = 20 0.18 AGE (V) T T 0.25 0.16 VOL 0.14 0.20 TION TION VOL 0.12 0.10 TURA 0.15 150°C TURA 0.08 25°C 150°C 0.10 25°C 0.06 0.04 −55°C 0.05 −55°C 0.02 , COLL−EMITT SA 0.00 , COLL−EMITT SA 0.00 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 CE(sat) CE(sat) V IC, COLLECTOR CURRENT (A) V IC, COLLECTOR CURRENT (A)
Figure 25. VCE at IC/IB = 10 Figure 26. VCE at IC/IB = 20
1.1 1.2 AGE (V) AGE (V) T IC/IB = 10 T IC/IB = 20 1.0 1.0 0.9 −55°C −55°C TION VOL 0.8 TION VOL 0.8 0.7 25°C TURA 25°C TURA 0.6 0.6 0.5 0.4 150°C 150°C 0.4 0.2 0.3 , BASE−EMITT SA , BASE−EMITT SA 0.2 0.0 sat) sat) 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 BE( BE( V V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 27. VBE(sat) at IC/IB = 10 Figure 28. VBE(sat) at IC/IB = 20 www.onsemi.com 7
1000 1000 VCE = 5 V 150°C VCE = 10 V 900 150°C 900 800 800 700 700 600 25°C 600 25°C 500 500 400 400 −55°C −55°C 300 , DC CURRENT GAIN 300 , DC CURRENT GAIN FE FE h 200 h 200 100 100 0 0 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 23. DC Current Gain at VCE = 5 V Figure 24. DC Current Gain at VCE = 10 V
0.20 0.30 I I AGE (V) C/IB = 10 C/IB = 20 0.18 AGE (V) T T 0.25 0.16 VOL 0.14 0.20 TION TION VOL 0.12 0.10 TURA 0.15 150°C TURA 0.08 25°C 150°C 0.10 25°C 0.06 0.04 −55°C 0.05 −55°C 0.02 , COLL−EMITT SA 0.00 , COLL−EMITT SA 0.00 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 CE(sat) CE(sat) V IC, COLLECTOR CURRENT (A) V IC, COLLECTOR CURRENT (A)
Figure 25. VCE at IC/IB = 10 Figure 26. VCE at IC/IB = 20
1.1 1.2 AGE (V) AGE (V) T IC/IB = 10 T IC/IB = 20 1.0 1.0 0.9 −55°C −55°C TION VOL 0.8 TION VOL 0.8 0.7 25°C TURA 25°C TURA 0.6 0.6 0.5 0.4 150°C 150°C 0.4 0.2 0.3 , BASE−EMITT SA , BASE−EMITT SA 0.2 0.0 sat) sat) 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 BE( BE( V V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 27. VBE(sat) at IC/IB = 10 Figure 28. VBE(sat) at IC/IB = 20 www.onsemi.com 7
