Datasheet BC846BDW1, BC847BDW1, BC848CDW1 (ON Semiconductor) - 8
| Manufacturer | ON Semiconductor |
| Description | Dual NPN Bipolar Transistor |
| Pages / Page | 11 / 8 — BC846BDW1, BC847BDW1, BC848CDW1. TYPICAL CHARACTERISTICS − BC848CDW1. … |
| Revision | 11 |
| File Format / Size | PDF / 107 Kb |
| Document Language | English |
BC846BDW1, BC847BDW1, BC848CDW1. TYPICAL CHARACTERISTICS − BC848CDW1. Figure 29. VBE(on) at VCE = 5 V
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BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC848CDW1
1.0 1000 VCE = 5 V VCE = 10 V 0.9 T AGE −55°C A = 25°C T 0.8 25°C 0.7 0.6 0.5 (V) 100 0.4 150°C PRODUCT 0.3 , BASE−EMITTER VOL 0.2 on) BE( 0.1 , CURRENT−GAIN − BANDWIDTH V f T 0.0 10 0.0001 0.001 0.01 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)
Figure 29. VBE(on) at VCE = 5 V Figure 30. Current − Gain − Bandwidth Product
10 2 TA = 25°C TA = 25°C T- IC = IC = 1.6 10 mA 20 mA Cib 1.2 IC = ANCE (pF) 50 mA OR−EMITTER VOL ACIT C I ob AGE (V) 0.8 C = 100 mA C, CAP 0.4 , COLLECT CEV 1 0 0.1 1 10 100 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA)
Figure 31. Capacitances Figure 32. Collector Saturation Region
−0.2 VCE = 5 V −0.6 −1 °C) −1.4 TURE COEFFICIENT (mV/ −1.8 qVB, for VBE −55°C to 150°C −2.2 , TEMPERA −2.6 q VB −3 0.1 1 10 100 IB, BASE CURRENT (mA)
Figure 33. Base−Emitter Temperature Coefficient www.onsemi.com 8
1.0 1000 VCE = 5 V VCE = 10 V 0.9 T AGE −55°C A = 25°C T 0.8 25°C 0.7 0.6 0.5 (V) 100 0.4 150°C PRODUCT 0.3 , BASE−EMITTER VOL 0.2 on) BE( 0.1 , CURRENT−GAIN − BANDWIDTH V f T 0.0 10 0.0001 0.001 0.01 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)
Figure 29. VBE(on) at VCE = 5 V Figure 30. Current − Gain − Bandwidth Product
10 2 TA = 25°C TA = 25°C T- IC = IC = 1.6 10 mA 20 mA Cib 1.2 IC = ANCE (pF) 50 mA OR−EMITTER VOL ACIT C I ob AGE (V) 0.8 C = 100 mA C, CAP 0.4 , COLLECT CEV 1 0 0.1 1 10 100 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA)
Figure 31. Capacitances Figure 32. Collector Saturation Region
−0.2 VCE = 5 V −0.6 −1 °C) −1.4 TURE COEFFICIENT (mV/ −1.8 qVB, for VBE −55°C to 150°C −2.2 , TEMPERA −2.6 q VB −3 0.1 1 10 100 IB, BASE CURRENT (mA)
Figure 33. Base−Emitter Temperature Coefficient www.onsemi.com 8
