Datasheet BC846ALT1G (ON Semiconductor) - 6
| Manufacturer | ON Semiconductor |
| Description | NPN Bipolar Transistor |
| Pages / Page | 13 / 6 — BC846ALT1G Series. BC846B, SBC846B. Figure 15. Collector Saturation … |
| Revision | 17 |
| File Format / Size | PDF / 111 Kb |
| Document Language | English |
BC846ALT1G Series. BC846B, SBC846B. Figure 15. Collector Saturation Region. Figure 16. Base−Emitter Temperature Coefficient
Model Line for this Datasheet
Text Version of Document
BC846ALT1G Series BC846B, SBC846B
2.0 1.0 TS) C) ° TA = 25°C 1.6 (mV/ 1.4 TAGE (VOL 20 mA 50 mA 100 mA 200 mA 1.2 1.8 q COEFFICIENT VB for VBE I -55°C to 125°C 0.8 C = 2.2 OR-EMITTER VOL 10 mA TURE 0.4 2.6 , COLLECT , TEMPERA CE VB V θ 0 3.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 15. Collector Saturation Region Figure 16. Base−Emitter Temperature Coefficient
40 TA = 25°C VCE = 5 V 500 TA = 25°C 20 Cib 200 ANCE (pF) 10 100 ACIT 6.0 50 C, CAP 4.0 Cob 20 f, CURRENT-GAIN - BANDWIDTH PRODUCT T 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 17. Capacitance Figure 18. Current−Gain − Bandwidth Product www.onsemi.com 6
2.0 1.0 TS) C) ° TA = 25°C 1.6 (mV/ 1.4 TAGE (VOL 20 mA 50 mA 100 mA 200 mA 1.2 1.8 q COEFFICIENT VB for VBE I -55°C to 125°C 0.8 C = 2.2 OR-EMITTER VOL 10 mA TURE 0.4 2.6 , COLLECT , TEMPERA CE VB V θ 0 3.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 15. Collector Saturation Region Figure 16. Base−Emitter Temperature Coefficient
40 TA = 25°C VCE = 5 V 500 TA = 25°C 20 Cib 200 ANCE (pF) 10 100 ACIT 6.0 50 C, CAP 4.0 Cob 20 f, CURRENT-GAIN - BANDWIDTH PRODUCT T 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 17. Capacitance Figure 18. Current−Gain − Bandwidth Product www.onsemi.com 6
