Datasheet BC856W, BC857W, BC858W, BC859W, BC860W (Infineon) - 3
| Manufacturer | Infineon |
| Description | PNP Silicon AF Transistors SOT-323 |
| Pages / Page | 11 / 3 — BC856W...BC860W. Maximum Ratings. Parameter. Symbol. Unit. Thermal … |
| File Format / Size | PDF / 187 Kb |
| Document Language | English |
BC856W...BC860W. Maximum Ratings. Parameter. Symbol. Unit. Thermal Resistance. Electrical Characteristics. Values. min. typ. max
Model Line for this Datasheet
Text Version of Document
BC856W...BC860W Maximum Ratings Parameter Symbol
BC856W BC857W BC858W
Unit
BC860W BC859W Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 124 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) R ≤ thJS 105 K/W
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 BC856W 65 - - BC857/860W 45 - - BC858/859W 30 - - Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IE = 0 BC856W 80 - - BC857/860W 50 - - BC858/859W 30 - - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 Jan-28-2005
BC856W BC857W BC858W
Unit
BC860W BC859W Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 124 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) R ≤ thJS 105 K/W
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 BC856W 65 - - BC857/860W 45 - - BC858/859W 30 - - Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IE = 0 BC856W 80 - - BC857/860W 50 - - BC858/859W 30 - - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 Jan-28-2005
