Datasheet F3L11MR12W2M1_B65 (Infineon) - 3

F3L11MR12W2M1_B65
VorläufigeDaten PreliminaryData IGBT,3-Level/IGBT,3-Level HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V ImplementierterKollektor-Strom Implementedcollectorcurrent ICN 100 A Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TH = 65°C, Tvj max = 175°C ICDC 65 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 200 A Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V
CharakteristischeWerte/CharacteristicValues
min. typ. max. Kollektor-Emitter-Sättigungsspannung IC = 100 A Tvj = 25°C 1,75 2,10 V Collector-emittersaturationvoltage VGE = 15 V Tvj = 125°C VCE sat 2,05 V Tvj = 150°C 2,10 V Gate-Schwellenspannung Gatethresholdvoltage IC = 4,00 mA, VCE = VGE, Tvj = 25°C VGEth 5,05 5,80 6,45 V Gateladung Gatecharge VGE = -15 V / 15 V QG 0,80 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 0,0 Ω Eingangskapazität Inputcapacitance f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 6,30 nF Rückwirkungskapazität Reversetransfercapacitance f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,27 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 0,04 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA Einschaltverzögerungszeit,induktiveLast IC = 100 A, VCE = 600 V Tvj = 25°C 0,013 µs Turn-ondelaytime,inductiveload t V d on GE = -15 V / 15 V Tvj = 125°C 0,014 µs RGon = 1,6 Ω Tvj = 150°C 0,014 µs Anstiegszeit,induktiveLast IC = 100 A, VCE = 600 V Tvj = 25°C 0,009 µs Risetime,inductiveload t V r GE = -15 V / 15 V Tvj = 125°C 0,01 µs RGon = 1,6 Ω Tvj = 150°C 0,01 µs Abschaltverzögerungszeit,induktiveLast IC = 100 A, VCE = 600 V Tvj = 25°C 0,196 µs Turn-offdelaytime,inductiveload t V d off GE = -15 V / 15 V Tvj = 125°C 0,287 µs RGoff = 1,6 Ω Tvj = 150°C 0,306 µs Fallzeit,induktiveLast IC = 100 A, VCE = 600 V Tvj = 25°C 0,138 µs Falltime,inductiveload t V f GE = -15 V / 15 V Tvj = 125°C 0,212 µs RGoff = 1,6 Ω Tvj = 150°C 0,253 µs EinschaltverlustenergieproPuls IC = 100 A, VCE = 600 V, Lσ = 35 nH Tvj = 25°C 1,94 mJ Turn-onenergylossperpulse di/dt = 7800 A/µs (Tvj = 150°C) Tvj = 125°C Eon 3,05 mJ VGE = -15 V / 15 V, RGon = 1,6 Ω Tvj = 150°C 3,34 mJ AbschaltverlustenergieproPuls IC = 100 A, VCE = 600 V, Lσ = 35 nH Tvj = 25°C 5,47 mJ Turn-offenergylossperpulse du/dt = 3200 V/µs (Tvj = 150°C) Tvj = 125°C Eoff 9,12 mJ VGE = -15 V / 15 V, RGoff = 1,6 Ω Tvj = 150°C 10,4 mJ Kurzschlußverhalten VGE ≤ 15 V, VCC = 800 V SCdata I V SC CEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C 400 A Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink proIGBT/perIGBT RthJH 0,655 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C Datasheet 3 V2.1 2019-06-26 Document Outline / MOSFET / MOSFET IGBT,3-Level / IGBT,3-Level Diode, 3-Level / Diode, 3-Level Modul / Module NTC-Widerstand / NTC-Thermistor Diagramme / charts Diagramme / charts Diagramme / charts Diagramme / charts Schaltplan / Circuit diagram Gehäuseabmessungen / Package outlines /