Datasheet F3L11MR12W2M1_B65 (Infineon) - 4
| Manufacturer | Infineon |
| Description | 3-Level 1200 V CoolSiC™ Module |
| Pages / Page | 11 / 4 — VorläufigeDaten. PreliminaryData. Diode,3-Level/Diode,3-Level … |
| Revision | 02_01 |
| File Format / Size | PDF / 675 Kb |
| Document Language | English |
VorläufigeDaten. PreliminaryData. Diode,3-Level/Diode,3-Level HöchstzulässigeWerte/MaximumRatedValues
Model Line for this Datasheet
Text Version of Document
F3L11MR12W2M1_B65
VorläufigeDaten PreliminaryData Diode,3-Level/Diode,3-Level HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V Dauergleichstrom ContinuousDCforwardcurrent IF 50 A PeriodischerSpitzenstrom Repetitivepeakforwardcurrent tP = 1 ms IFRM 100 A Grenzlastintegral VR = 0 V, tP = 10 ms, Tvj = 125°C I²t-value I²t 370 A²s VR = 0 V, tP = 10 ms, Tvj = 150°C 340 A²s
CharakteristischeWerte/CharacteristicValues
min. typ. max. Durchlassspannung IF = 50 A, VGE = 0 V Tvj = 25°C 1,75 2,15 V Forwardvoltage IF = 50 A, VGE = 0 V Tvj = 125°C VF 1,75 V IF = 50 A, VGE = 0 V Tvj = 150°C 1,75 V Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink proDiode/perdiode RthJH 1,17 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C
Modul/Module
Isolations-Prüfspannung Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 3,0 kV InnereIsolation Basisisolierung(Schutzklasse1,EN61140) Internalisolation basicinsulation(class1,IEC61140) Al2O3 Kriechstrecke Kontakt-Kühlkörper/terminaltoheatsink Creepagedistance Kontakt-Kontakt/terminaltoterminal mm Luftstrecke Kontakt-Kühlkörper/terminaltoheatsink Clearance Kontakt-Kontakt/terminaltoterminal 10,0 mm 5,0 VergleichszahlderKriechwegbildung Comperativetrackingindex CTI > 200 RelativerTemperaturindex(elektr.) Gehäuse RTIElec. housing RTI 140 °C min. typ. max. Modulstreuinduktivität Strayinductancemodule LsCE 12 nH Lagertemperatur Storagetemperature Tstg -40 125 °C Anpresskraft für mech. Bef. pro Feder F 40 - 80 N mountig force per clamp Gewicht Weight G 39 g The current under continuous operation is limited to 25 A rms per connector pin. Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN 2018-09 must be considered to ensure sound operation of the device over the planned lifetime. Datasheet 4 V2.1 2019-06-26 Document Outline / MOSFET / MOSFET IGBT,3-Level / IGBT,3-Level Diode, 3-Level / Diode, 3-Level Modul / Module NTC-Widerstand / NTC-Thermistor Diagramme / charts Diagramme / charts Diagramme / charts Diagramme / charts Schaltplan / Circuit diagram Gehäuseabmessungen / Package outlines /
VorläufigeDaten PreliminaryData Diode,3-Level/Diode,3-Level HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V Dauergleichstrom ContinuousDCforwardcurrent IF 50 A PeriodischerSpitzenstrom Repetitivepeakforwardcurrent tP = 1 ms IFRM 100 A Grenzlastintegral VR = 0 V, tP = 10 ms, Tvj = 125°C I²t-value I²t 370 A²s VR = 0 V, tP = 10 ms, Tvj = 150°C 340 A²s
CharakteristischeWerte/CharacteristicValues
min. typ. max. Durchlassspannung IF = 50 A, VGE = 0 V Tvj = 25°C 1,75 2,15 V Forwardvoltage IF = 50 A, VGE = 0 V Tvj = 125°C VF 1,75 V IF = 50 A, VGE = 0 V Tvj = 150°C 1,75 V Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink proDiode/perdiode RthJH 1,17 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C
Modul/Module
Isolations-Prüfspannung Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 3,0 kV InnereIsolation Basisisolierung(Schutzklasse1,EN61140) Internalisolation basicinsulation(class1,IEC61140) Al2O3 Kriechstrecke Kontakt-Kühlkörper/terminaltoheatsink Creepagedistance Kontakt-Kontakt/terminaltoterminal mm Luftstrecke Kontakt-Kühlkörper/terminaltoheatsink Clearance Kontakt-Kontakt/terminaltoterminal 10,0 mm 5,0 VergleichszahlderKriechwegbildung Comperativetrackingindex CTI > 200 RelativerTemperaturindex(elektr.) Gehäuse RTIElec. housing RTI 140 °C min. typ. max. Modulstreuinduktivität Strayinductancemodule LsCE 12 nH Lagertemperatur Storagetemperature Tstg -40 125 °C Anpresskraft für mech. Bef. pro Feder F 40 - 80 N mountig force per clamp Gewicht Weight G 39 g The current under continuous operation is limited to 25 A rms per connector pin. Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN 2018-09 must be considered to ensure sound operation of the device over the planned lifetime. Datasheet 4 V2.1 2019-06-26 Document Outline / MOSFET / MOSFET IGBT,3-Level / IGBT,3-Level Diode, 3-Level / Diode, 3-Level Modul / Module NTC-Widerstand / NTC-Thermistor Diagramme / charts Diagramme / charts Diagramme / charts Diagramme / charts Schaltplan / Circuit diagram Gehäuseabmessungen / Package outlines /
