Datasheet NCD2400M (IXYS) - 10
| Manufacturer | IXYS |
| Description | Wide Capacitance Range, Non-volatileDigital Programmable Capacitor |
| Pages / Page | 22 / 10 — NCD2400M. Relative deviation of the capacitance with respect to the … |
| File Format / Size | PDF / 414 Kb |
| Document Language | English |
NCD2400M. Relative deviation of the capacitance with respect to the supply voltage around nominal value of 3.3V. Parameter
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INTEGRATED CIRCUITS DIVISION
NCD2400M
The equivalent shunt capacitance changes for small variations of the supply voltage around the nominal value. The following table shows the deviation of the equivalent shunt capacitance for a 200mV change of the supply voltage from 3.3V.
Relative deviation of the capacitance with respect to the supply voltage around nominal value of 3.3V. Parameter Code 0 Code 1 Code 2 Code 4 Code 8 Code 16 Code 32 Code 64 Code 128 Code 256 Code 511 pF/V
-0.22 -0.22 -0.22 -0.22 -0.22 -0.21 -0.21 -0.19 -0.17 -0.11 -0.01 For a deviation of +200mV in supply voltage, the capacitance for Code 0 will be modified by -0.044pF. Using the previously-stated equation for calculating the nominal values of Cshunt it can be expected the nominal value of Cshunt will shift from 12.5pF to 12.456pF. Similarly, for a supply voltage change of -200mV, the nominal value of Cshunt will be 12.5pF - (-0.044pF) = 12.544pF. 10
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R01 Document Outline Features Applications Description 1. Specifications 1.1 Package Pinout 1.2 Pin Descriptions 1.3 Absolute Maximum Ratings 1.4 Recommended Operating Conditions 1.5 ESD Rating 1.6 General Conditions for Electrical Characteristics 1.7 Capacitor Electrical Characteristics 1.8 Digital Interface: Electrical Characteristics of SDA and SCL 1.9 Digital Interface: AC Characteristics 1.10 Power Supply 2. Performance Data 3. Functional Description 3.1 Introduction 3.2 Capacitive Digital to Analog Converter (CDAC) 3.3 Non-Volatile Memory Configuration 3.4 Device Address 3.5 Operating Modes 3.5.1 Volatile Mode 3.5.2 Non-Volatile Mode 3.6 I2C Serial Interface 3.6.1 Write Commands 3.6.2 Write Volatile Register Operation 3.6.3 Write Non-Volatile Memory Operation 3.6.4 Read Operation 3.6.5 Set Non-Volatile Mode Operation 3.6.6 Electrical and Timing Considerations 3.6.7 Application Diagrams 3.7 Capacitor Interface Electrical and Biasing Considerations 4. Capacitance Determination and Programming Procedure 5. Manufacturing Information 5.1 Moisture Sensitivity 5.2 ESD Sensitivity 5.3 Soldering Profile 5.4 Board Wash 5.5 Mechanical Dimensions 5.5.1 Package Dimensions 5.5.2 Tape & Reel Specification
NCD2400M
The equivalent shunt capacitance changes for small variations of the supply voltage around the nominal value. The following table shows the deviation of the equivalent shunt capacitance for a 200mV change of the supply voltage from 3.3V.
Relative deviation of the capacitance with respect to the supply voltage around nominal value of 3.3V. Parameter Code 0 Code 1 Code 2 Code 4 Code 8 Code 16 Code 32 Code 64 Code 128 Code 256 Code 511 pF/V
-0.22 -0.22 -0.22 -0.22 -0.22 -0.21 -0.21 -0.19 -0.17 -0.11 -0.01 For a deviation of +200mV in supply voltage, the capacitance for Code 0 will be modified by -0.044pF. Using the previously-stated equation for calculating the nominal values of Cshunt it can be expected the nominal value of Cshunt will shift from 12.5pF to 12.456pF. Similarly, for a supply voltage change of -200mV, the nominal value of Cshunt will be 12.5pF - (-0.044pF) = 12.544pF. 10
www.ixysic.com
R01 Document Outline Features Applications Description 1. Specifications 1.1 Package Pinout 1.2 Pin Descriptions 1.3 Absolute Maximum Ratings 1.4 Recommended Operating Conditions 1.5 ESD Rating 1.6 General Conditions for Electrical Characteristics 1.7 Capacitor Electrical Characteristics 1.8 Digital Interface: Electrical Characteristics of SDA and SCL 1.9 Digital Interface: AC Characteristics 1.10 Power Supply 2. Performance Data 3. Functional Description 3.1 Introduction 3.2 Capacitive Digital to Analog Converter (CDAC) 3.3 Non-Volatile Memory Configuration 3.4 Device Address 3.5 Operating Modes 3.5.1 Volatile Mode 3.5.2 Non-Volatile Mode 3.6 I2C Serial Interface 3.6.1 Write Commands 3.6.2 Write Volatile Register Operation 3.6.3 Write Non-Volatile Memory Operation 3.6.4 Read Operation 3.6.5 Set Non-Volatile Mode Operation 3.6.6 Electrical and Timing Considerations 3.6.7 Application Diagrams 3.7 Capacitor Interface Electrical and Biasing Considerations 4. Capacitance Determination and Programming Procedure 5. Manufacturing Information 5.1 Moisture Sensitivity 5.2 ESD Sensitivity 5.3 Soldering Profile 5.4 Board Wash 5.5 Mechanical Dimensions 5.5.1 Package Dimensions 5.5.2 Tape & Reel Specification
