Datasheet BCV61 (Infineon) - 5
| Manufacturer | Infineon |
| Description | NPN Silicon Double Transistor |
| Pages / Page | 7 / 5 — BCV61. Collector-base capacitance. Total power dissipation. Emitter-base … |
| Revision | 01_01 |
| File Format / Size | PDF / 544 Kb |
| Document Language | English |
BCV61. Collector-base capacitance. Total power dissipation. Emitter-base capacitance. Permissible pulse load
Model Line for this Datasheet
Text Version of Document
BCV61 Collector-base capacitance
Ccb = ƒ(VCB)
Total power dissipation
Ptot = f(TS)
Emitter-base capacitance
Ceb = ƒ(VEB) 12 350 pF mW 10 ) 9 EB(C 250 8 CB tot C P 7 200 6 5 150 CEB 4 100 3 2 50 1 CCB 0 0 0 4 8 12 16 V 22 0 15 30 45 60 75 90 105 120 °C 150 VCB(VEB TS
Permissible pulse load
Ptotmax / PtotDC = f (tp) 3 BCV 61 EHP00942 10 Ptotmax 5 t p t p PtotDC D = T T 102 D = 0 0.005 5 0.01 0.02 0.05 0.1 0.2 0.5 101 5 0 10 10-6 10-5 10-4 10-3 10-2 100 s t p 5 2011-10-13
Ccb = ƒ(VCB)
Total power dissipation
Ptot = f(TS)
Emitter-base capacitance
Ceb = ƒ(VEB) 12 350 pF mW 10 ) 9 EB(C 250 8 CB tot C P 7 200 6 5 150 CEB 4 100 3 2 50 1 CCB 0 0 0 4 8 12 16 V 22 0 15 30 45 60 75 90 105 120 °C 150 VCB(VEB TS
Permissible pulse load
Ptotmax / PtotDC = f (tp) 3 BCV 61 EHP00942 10 Ptotmax 5 t p t p PtotDC D = T T 102 D = 0 0.005 5 0.01 0.02 0.05 0.1 0.2 0.5 101 5 0 10 10-6 10-5 10-4 10-3 10-2 100 s t p 5 2011-10-13
