Datasheet BCV61 (Infineon)
| Manufacturer | Infineon |
| Description | NPN Silicon Double Transistor |
| Pages / Page | 7 / 1 — BCV61. NPN Silicon Double Transistor. Type. Marking. Pin Configuration. … |
| Revision | 01_01 |
| File Format / Size | PDF / 544 Kb |
| Document Language | English |
BCV61. NPN Silicon Double Transistor. Type. Marking. Pin Configuration. Package. Maximum Ratings Parameter. Symbol. Value. Unit
Model Line for this Datasheet
Text Version of Document
BCV61 NPN Silicon Double Transistor
• To be used as a current mirror • Good thermal coupling and VBE matching 3 2 • High current gain 4 1 • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 C1 (2) C2 (1) Tr.1 Tr.2 E1 (3) E2 (4) EHA00012
Type Marking Pin Configuration Package
BCV61B 1Ks 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV61C 1Ls 1 = C2 2 = C1 3 = E1 4 = E2 SOT143
Maximum Ratings Parameter Symbol Value Unit
Collector-emitter voltage VCEO 30 V (transistor T1) Collector-base voltage (open emitter) VCBO 30 (transistor T1) Emitter-base voltage VEBS 6 DC collector current IC 100 mA Peak collector current, tp < 10 ms ICM 200 Base peak current (transistor T1) IBM 200 Total power dissipation, TS = 99 °C Ptot 300 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS ≤170 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-10-13
• To be used as a current mirror • Good thermal coupling and VBE matching 3 2 • High current gain 4 1 • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 C1 (2) C2 (1) Tr.1 Tr.2 E1 (3) E2 (4) EHA00012
Type Marking Pin Configuration Package
BCV61B 1Ks 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV61C 1Ls 1 = C2 2 = C1 3 = E1 4 = E2 SOT143
Maximum Ratings Parameter Symbol Value Unit
Collector-emitter voltage VCEO 30 V (transistor T1) Collector-base voltage (open emitter) VCBO 30 (transistor T1) Emitter-base voltage VEBS 6 DC collector current IC 100 mA Peak collector current, tp < 10 ms ICM 200 Base peak current (transistor T1) IBM 200 Total power dissipation, TS = 99 °C Ptot 300 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS ≤170 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-10-13
