Datasheet BCV61 (Infineon) - 3
| Manufacturer | Infineon |
| Description | NPN Silicon Double Transistor |
| Pages / Page | 7 / 3 — BCV61. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. … |
| Revision | 01_01 |
| File Format / Size | PDF / 544 Kb |
| Document Language | English |
BCV61. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. Characteristics. AC characteristics for transistor T1
Model Line for this Datasheet
Text Version of Document
BCV61 Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. Characteristics
Base-emitter forward voltage VBES V IE = 10 µA 0.4 - - IE = 250 mA - - 1.8 Matching of transistor T1 and transistor T2 IC1 / IC2 - at IE2 = 0.5mA and VCE1 = 5V - - - TA = 25 °C 0.7 - 1.3 TA = 150 °C 0.7 - 1.3 Thermal coupling of transistor T1 and IE2 - 5 - mA transistor T2 1) T1: VCE = 5V Maximum current of thermal stability of IC1
AC characteristics for transistor T1
Transition frequency fT - 250 - MHz IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - 0.95 - pF VCB = 10 V, f = 1 MHz Emitter-base capacitance Ceb - 9 - VEB = 0.5 V, f = 1 MHz Noise figure F - 2 - dB IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 1 kHz, ∆ f = 200 Hz Short-circuit input impedance h11e - 4.5 - kΩ IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio h12e - 2 - 10-4 IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio h21e 100 - 900 - IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance h22e - 30 - µS IC = 1 mA, VCE = 10 V, f = 1 kHz 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm 3 2011-10-13
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. Characteristics
Base-emitter forward voltage VBES V IE = 10 µA 0.4 - - IE = 250 mA - - 1.8 Matching of transistor T1 and transistor T2 IC1 / IC2 - at IE2 = 0.5mA and VCE1 = 5V - - - TA = 25 °C 0.7 - 1.3 TA = 150 °C 0.7 - 1.3 Thermal coupling of transistor T1 and IE2 - 5 - mA transistor T2 1) T1: VCE = 5V Maximum current of thermal stability of IC1
AC characteristics for transistor T1
Transition frequency fT - 250 - MHz IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - 0.95 - pF VCB = 10 V, f = 1 MHz Emitter-base capacitance Ceb - 9 - VEB = 0.5 V, f = 1 MHz Noise figure F - 2 - dB IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 1 kHz, ∆ f = 200 Hz Short-circuit input impedance h11e - 4.5 - kΩ IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio h12e - 2 - 10-4 IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio h21e 100 - 900 - IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance h22e - 30 - µS IC = 1 mA, VCE = 10 V, f = 1 kHz 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm 3 2011-10-13
