Datasheet VSMY5850X01 (Vishay) - 2
| Manufacturer | Vishay |
| Description | High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology |
| Pages / Page | 6 / 2 — VSMY5850X01. ABSOLUTE MAXIMUM RATINGS. PARAMETER. TEST CONDITION. SYMBOL. … |
| File Format / Size | PDF / 127 Kb |
| Document Language | English |
VSMY5850X01. ABSOLUTE MAXIMUM RATINGS. PARAMETER. TEST CONDITION. SYMBOL. VALUE. UNIT. BASIC CHARACTERISTICS. MIN. TYP. MAX
Model Line for this Datasheet
Text Version of Document
VSMY5850X01
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 5 V Forward current IF 100 mA Peak forward current tp/T = 0.1, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 500 mA Power dissipation PV 210 mW Junction temperature Tj 125 °C Operating temperature range Tamb -40 to +110 °C Storage temperature range Tstg -40 to +110 °C Soldering temperature According to Fig. 7, J-STD-020 Tsd 260 °C Thermal resistance junction-to-ambient EIA / JESD51 RthJA 280 K/W Axis Title Axis Title 220 10000 110 10000 200 100 ) 180 R = 280 K/W thJA 90 R = 280 K/W thJA W ) 160 A (m 80 (m n 1000 1000 o 140 70 pati 120 ne ne rrent ne ine 60 u ne ine issi 100 1st li 50 2nd li 2nd l rd C 1st li 2nd li 2nd l a er D 80 40 100 100 ow orw P 60 F 30 - - V I F 40 P 20 20 10 0 10 0 10 0 20 40 60 80 100 120 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF - 1.8 2.1 V Temperature coefficient of VF IF = 100 mA, tp = 20 ms TKVF - -1.8 - mV/K Reverse current IR Not designed for reverse operation μA V Junction capacitance R = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ - 30 - pF Radiant intensity IF = 100 mA, tp = 20 ms Ie 9 13 18 mW/sr Temperature coefficient of radiant I power F = 100 mA, tp = 20 ms TKφe - -0.16 - %/K Angle of half intensity ϕ - ± 60 - ° Peak wavelength IF = 100 mA, tp = 20 ms λp - 850 - nm Spectral bandwidth IF = 100 mA, tp = 20 ms Δλ - 35 - nm Temperature coefficient of λp IF = 100 mA, tp = 20 ms TKλp - 0.25 - nm/K Rise time IF = 100 mA, 10 % to 90 % tr - 7 - ns Fall time IF = 100 mA, 10 % to 90 % tf - 7 - ns Rev. 1.0, 11-Apr-2019
2
Document Number: 84915 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 5 V Forward current IF 100 mA Peak forward current tp/T = 0.1, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 500 mA Power dissipation PV 210 mW Junction temperature Tj 125 °C Operating temperature range Tamb -40 to +110 °C Storage temperature range Tstg -40 to +110 °C Soldering temperature According to Fig. 7, J-STD-020 Tsd 260 °C Thermal resistance junction-to-ambient EIA / JESD51 RthJA 280 K/W Axis Title Axis Title 220 10000 110 10000 200 100 ) 180 R = 280 K/W thJA 90 R = 280 K/W thJA W ) 160 A (m 80 (m n 1000 1000 o 140 70 pati 120 ne ne rrent ne ine 60 u ne ine issi 100 1st li 50 2nd li 2nd l rd C 1st li 2nd li 2nd l a er D 80 40 100 100 ow orw P 60 F 30 - - V I F 40 P 20 20 10 0 10 0 10 0 20 40 60 80 100 120 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF - 1.8 2.1 V Temperature coefficient of VF IF = 100 mA, tp = 20 ms TKVF - -1.8 - mV/K Reverse current IR Not designed for reverse operation μA V Junction capacitance R = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ - 30 - pF Radiant intensity IF = 100 mA, tp = 20 ms Ie 9 13 18 mW/sr Temperature coefficient of radiant I power F = 100 mA, tp = 20 ms TKφe - -0.16 - %/K Angle of half intensity ϕ - ± 60 - ° Peak wavelength IF = 100 mA, tp = 20 ms λp - 850 - nm Spectral bandwidth IF = 100 mA, tp = 20 ms Δλ - 35 - nm Temperature coefficient of λp IF = 100 mA, tp = 20 ms TKλp - 0.25 - nm/K Rise time IF = 100 mA, 10 % to 90 % tr - 7 - ns Fall time IF = 100 mA, 10 % to 90 % tf - 7 - ns Rev. 1.0, 11-Apr-2019
2
Document Number: 84915 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
