Datasheet 6N138, 6N139 (Toshiba) - 2

6N138,6N139
Absolute Maximum Ratings (*) (Ta = 0°C to + 70°C)
Characteristics Symbol Rating Unit Forward current (Note 1) IF 20 mA Pulse forward current I (*1) FP 40 mA D Total pulse forward current I (*2) FP LE 1 A Reverse voltage VR 5 V Diode power dissipation (Note 2) PD 35 mW Output current (Note 3) IO 60 mA Emitter−base reverse voltage VEB 0.5 V tor ec Supply voltage V (*3) CC − 0.5 to 18 V et D Output voltage V (*3) O − 0.5 to 18 V Output power dissipation (Note 4) PO 100 mW Operating temperature range Topr 0 to 70 °C Storage temperature range Tstg − 55 to 125 °C Lead solder temperature (10s) (*4) Tsol 260 °C 2500 Vrms Isolation voltage (60s, R.H.≤ 60%) BV (**) S 3540 Vdc Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (*) JEDEC registered data (**) Not registered JEDEC (*1) 50 % duty cycle, 1 ms pulse width (*2) Pulse width 1 μs, 300 pps (*3) 6N138… −0.5 to 7 V (*4) 1.6 mm below seating plane © 2019 2 2019-06-10 Toshiba Electronic Devices & Storage Corporation