Datasheet TCPP01-M12 (STMicroelectronics) - 5
| Manufacturer | STMicroelectronics |
| Description | USB type-C port protection |
| Pages / Page | 25 / 5 — TCPP01-M12. Characteristics. Table 5. Electrical characteristics – VBUS … |
| File Format / Size | PDF / 2.5 Mb |
| Document Language | English |
TCPP01-M12. Characteristics. Table 5. Electrical characteristics – VBUS OVP control, TOP = -40 °C to +85 °C. Value. Symbol
Model Line for this Datasheet
Text Version of Document
link to page 5 link to page 5
TCPP01-M12 Characteristics Table 5. Electrical characteristics – VBUS OVP control, TOP = -40 °C to +85 °C Value Symbol Parameter Test condition Unit Min. Typ. Max.
VCC = 3.0 - 3.6 V, VBUSc(1) = 4.0 V 5.0 5.5 6.0 VGS GATE to SOURCE voltage V VCC = 3.0 - 3.6 V, VBUSc(1) = 3.3 V 4.0 5.0 tON_VBUS Turn-on time on VBUS pin VCC = 3.0 - 3.6 V 1 ms Vovp_th OVP VBUS threshold voltage VCC = 3.0 - 3.6 V 1.20 1.25 1.34 V Vhyst OVP VBUS voltage hysteresis VCC = 3.0 - 3.6 V 0.13 V tovp_VBUS OVP VBUS response time Gate capacitance = 470 pF, VCC = 3.0 - 3.6 V 100 ns 1. VBUSc is the VBUS voltage as seen from USB-C connector between VBUS and GND.
Table 6. Electrical characteristics – DB/ pin and CC lines OVP, TOP = -40 °C to +85 °C Value Symbol Parameter Test condition Unit Min. Typ. Max.
RON ON resistance of CC OVP FET VCC = 3.0 - 3.6 V 1.2 Ω RON_FLAT ON resistance flatness 0 - 1.2 V 5.0 mΩ CON_CC Equivalent ON capacitance 0 - 1.2 V, f = 400 kHz 40 100 pF VCL_DB Dead battery clamp voltage I = 200 µA 1.5 V VTH_CC CC OVP threshold voltage VCC = 3.0 - 3.6 V 5.6 6.0 6.4 V VOVP_CC_H CC OVP hysteresis VCC = 3.0 - 3.6 V 10 mV t_ovp_cc OVP response time on the CC pins (internal FET) VCC = 3.0 - 3.6 V 70 ns BW_CCx Bandwidth on CCx pins at -3dB 0 - 1.2 V 10 MHz RDB_off Equivalent resistor when dead battery is OFF VCC = 3.0 - 3.6 V 170 300 460 kΩ
Table 7. Electrical characteristics – Fault reporting, TOP = -40 °C to +85 °C Value Symbol Parameter Test condition Unit Min. Typ. Max.
tpd Propagation time from OVP, OTP or UVLO to FLT/ - 5 - µs RON FLT/ pin resistance when active VCC = 3.0 - 3.6 V - 250 - Ω ROFF FLT/ pin resistance when inactive - 1 - MΩ
DS12900
-
Rev 1 page 5/25
Document Outline Cover image Product status / summary Features Applications Description 1 Pinout and functions 2 TCPP01-M12 simplified internal block diagram 3 Characteristics 4 Typical electrical characteristics curves 5 Application 5.1 General information 5.2 Electrical hazards related to USB Type-C 5.2.1 CC lines short to VBUS 5.2.2 Defective charger 5.2.3 Electrostatic discharge (ESD) 5.3 USB Type-C protection 5.4 USB charging system scalability 5.5 How to handle dead battery (DB) condition with the TCPP01-M12 5.6 Application example for USB type-C power delivery for sink (consumer), PPS compliant, without battery 5.6.1 ESD capacitor (C3) 5.6.2 CC line capacitance (C1, C2) 5.6.3 Sense resistor (R1, R2) 5.6.4 N-channel MOSFET (T1) 5.6.5 Complementary products for USB dataline protection for pins DP, DM, SSRX, SSTX 5.7 Typical USB-C battery powered application 5.8 Typical USB-C source application 5.9 Sink-source application example based on STM32G0 (with two UCPD ports) 6 PCB design recommendations 7 Package information 7.1 QFN12 package information 8 Ordering information Revision history
TCPP01-M12 Characteristics Table 5. Electrical characteristics – VBUS OVP control, TOP = -40 °C to +85 °C Value Symbol Parameter Test condition Unit Min. Typ. Max.
VCC = 3.0 - 3.6 V, VBUSc(1) = 4.0 V 5.0 5.5 6.0 VGS GATE to SOURCE voltage V VCC = 3.0 - 3.6 V, VBUSc(1) = 3.3 V 4.0 5.0 tON_VBUS Turn-on time on VBUS pin VCC = 3.0 - 3.6 V 1 ms Vovp_th OVP VBUS threshold voltage VCC = 3.0 - 3.6 V 1.20 1.25 1.34 V Vhyst OVP VBUS voltage hysteresis VCC = 3.0 - 3.6 V 0.13 V tovp_VBUS OVP VBUS response time Gate capacitance = 470 pF, VCC = 3.0 - 3.6 V 100 ns 1. VBUSc is the VBUS voltage as seen from USB-C connector between VBUS and GND.
Table 6. Electrical characteristics – DB/ pin and CC lines OVP, TOP = -40 °C to +85 °C Value Symbol Parameter Test condition Unit Min. Typ. Max.
RON ON resistance of CC OVP FET VCC = 3.0 - 3.6 V 1.2 Ω RON_FLAT ON resistance flatness 0 - 1.2 V 5.0 mΩ CON_CC Equivalent ON capacitance 0 - 1.2 V, f = 400 kHz 40 100 pF VCL_DB Dead battery clamp voltage I = 200 µA 1.5 V VTH_CC CC OVP threshold voltage VCC = 3.0 - 3.6 V 5.6 6.0 6.4 V VOVP_CC_H CC OVP hysteresis VCC = 3.0 - 3.6 V 10 mV t_ovp_cc OVP response time on the CC pins (internal FET) VCC = 3.0 - 3.6 V 70 ns BW_CCx Bandwidth on CCx pins at -3dB 0 - 1.2 V 10 MHz RDB_off Equivalent resistor when dead battery is OFF VCC = 3.0 - 3.6 V 170 300 460 kΩ
Table 7. Electrical characteristics – Fault reporting, TOP = -40 °C to +85 °C Value Symbol Parameter Test condition Unit Min. Typ. Max.
tpd Propagation time from OVP, OTP or UVLO to FLT/ - 5 - µs RON FLT/ pin resistance when active VCC = 3.0 - 3.6 V - 250 - Ω ROFF FLT/ pin resistance when inactive - 1 - MΩ
DS12900
-
Rev 1 page 5/25
Document Outline Cover image Product status / summary Features Applications Description 1 Pinout and functions 2 TCPP01-M12 simplified internal block diagram 3 Characteristics 4 Typical electrical characteristics curves 5 Application 5.1 General information 5.2 Electrical hazards related to USB Type-C 5.2.1 CC lines short to VBUS 5.2.2 Defective charger 5.2.3 Electrostatic discharge (ESD) 5.3 USB Type-C protection 5.4 USB charging system scalability 5.5 How to handle dead battery (DB) condition with the TCPP01-M12 5.6 Application example for USB type-C power delivery for sink (consumer), PPS compliant, without battery 5.6.1 ESD capacitor (C3) 5.6.2 CC line capacitance (C1, C2) 5.6.3 Sense resistor (R1, R2) 5.6.4 N-channel MOSFET (T1) 5.6.5 Complementary products for USB dataline protection for pins DP, DM, SSRX, SSTX 5.7 Typical USB-C battery powered application 5.8 Typical USB-C source application 5.9 Sink-source application example based on STM32G0 (with two UCPD ports) 6 PCB design recommendations 7 Package information 7.1 QFN12 package information 8 Ordering information Revision history
