Datasheet SID1181KQ SCALE-iDriver (Power Integrations) - 6

SID1181KQ Application Examples and Components Selection
C and C . The gate charge will vary according to the type of S11 S12 power semiconductor switch that is being driven. Typical y, C + C Figures 12 and 13 show the schematic and typical components used S11 S12 should be at least 3 µF multiplied by the total gate charge of the for a SCALE-iDriver design. In both cases the primary-side supply power semiconductor switch (Q ) divided by 1 µC. A 10 nF capacitor voltage (V ) is connected between VCC and GND pins and supported GATE VCC C is connected between the GH and VGXX pins. through a supply bypass ceramic capacitor C (4.7 µF typical y). If the GXX 1 command signal voltage level is higher than the rated IN pin voltage The gate of the power semiconductor switch is connected through (in this case 15 V) a resistive voltage divider should be used. Additional resistor R to the GH pin and by R to the GL pin. If the value of GON GOFF capacitor C and Schmitt trigger IC can be used to provide input R is the same as R the GH pin can be connected to the GL pin GON GOFF F 1 signal filtering. The SO output has 5 V logic and the R is selected and a common gate resistor can be connected to the gate. In any SO so that it does not exceed absolute maximum rated I current. case, proper consideration needs to be given to the power dissipation SO and temperature performance of the gate resistors. The secondary-side isolated power supply (V ) is connected between TOT VISO and COM. The positive voltage rail (V ) is supported through To ensure gate voltage stabilization and col ector current limitation VISO 4.7 µF ceramic capacitors C and C connected in paral el. The during a short-circuit, the gate is connected to the VISO pin through S21 S22 negative voltage rail (V ) is similarly supported through capacitors a Schottky diode D (for example PMEG4010). STO VEE
SCALE-iDriver
RVCE 120 kΩ RVCE2-11
VCE Primary-Side Secondary-Side Logic Logic
R
Command
1 IC1
VGXX
C D RES CL
Signal
3.3 kΩ 74LVC
IN
33 pF BAS416 CGXX 10 nF R D
VISO
STO
SO
SO 4.7 kΩ
SO
CS21 CS22 R Collector GON C C 4.7 µF 4.7 µF
GH VCC
1 4.7 2 µF 470 nF
VCC
Gate
+
FluxLink V
-
TOT R C R GOFF F 2
GL GND
1 kΩ
GND
RSO Emitter 22 kΩ
VEE
CS11 CS12 4.7 µF 4.7 µF
COM
PI-8639a-062619 Figure 13. SCALE-iDriver Application Example using a Resistor Network for Desaturation Detection.
SCALE-iDriver
RVCE 330 Ω DVCE1
VCE Primary-Side Secondary-Side Logic Logic
R
Command
1 IC1
VGXX
R C RES RES
Signal
3.3 kΩ 74LVC 24-62 kΩ 33-330 pF
IN
CGXX 10 nF D R
VISO
STO
SO
SO 4.7 kΩ
SO
CS21 CS22 Collector 4.7 µF 4.7 µF RGON C C
GH VCC
1 2 4.7 µF 470 nF
VCC
Gate
+
FluxLink V
-
TOT RGOFF C R F 2
GL GND
1 kΩ
GND
RDIS Emitter 22 kΩ
VEE
C C S11 S12 4.7 µF 4.7 µF
COM
PI-8638a-062619 Figure 12. SCALE-iDriver Application Example using Diodes for Desaturation Detection.
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Rev. B 09/19 www.power.com Document Outline Product Highlights Description Product Portfolio Pin Functional Description SCALE-iDriver Functional Description Application Examples and Components Selection Power Dissipation and IC Junction Temperature Estimation Absolute Maximum Ratings Thermal Resistance Key Electrical Characteristics Typical Performance Characteristics eSOP-R16B Package Drawing MSL Table ESD and Latch-Up Table IEC 60664-1 Rating Table Electrical Characteristics (EMI) Table Regulatory Information Table Part Ordering Information