Datasheet MTD1N60E (Motorola) - 2
| Manufacturer | Motorola |
| Description | TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount. N−Channel Enhancement−Mode Silicon Gate |
| Pages / Page | 10 / 2 — ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. … |
| Revision | XXX |
| File Format / Size | PDF / 239 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS (1)
Model Line for this Datasheet
Text Version of Document
MTD1N60E
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 µAdc) 600 — — Vdc Temperature Coefficient (Positive) — 720 — mV/°C Zero Gate Voltage Drain Current IDSS µAdc (VDS = 600 Vdc, VGS = 0 Vdc) — — 10 (VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 100 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 µAdc) 2.0 3.2 4.0 Vdc Temperature Coefficient (Negative) — 6.0 — mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 0.5 Adc) RDS(on) — 5.9 8.0 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 1.0 Adc) — — 9.6 (ID = 0.5 Adc, TJ = 125°C) — — 8.4 Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc) gFS 0.5 0.8 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 224 310 pF (V 25 Vd V 0 Vd Output Capacitance DS = 25 Vdc, VGS = 0 Vdc, C f = 1.0 MHz f = 1.0 ) oss — 27 40 MHz) Reverse Transfer Capacitance Crss — 6.0 10
SWITCHING CHARACTERISTICS (2)
Turn−On Delay Time td(on) — 8.8 20 ns Rise Time (VDD = 300 Vdc, ID = 1.0 Adc, tr — 6.8 14 VGS V = 10 Vdc GS = 10 Vdc, Turn−Off Delay Time RG = 9.1 G 9.1 Ω ) t Ω) d(off) — 15 30 Fall Time tf — 20 40 Gate Charge QT — 7.1 11 nC (S Fi 8) (See Figure 8) (VDS = 400 Vdc, ID = 1.0 Adc, Q1 — 1.7 — (VDS 400 Vdc, ID 1.0 Adc, VGS = 10 Vdc) Q2 — 3.2 — Q3 — 3.9 —
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (1) V Vdc (I SD S = 1.0 Adc, VGS = 0 Vdc) — 0.82 1.4 (IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C) — 0.7 — Reverse Recovery Time trr — 464 — ns (S Fi 14) (See Figure 14) (IS = 1.0 Adc, VGS = 0 Vdc, ta — 36 — (IS 1.0 Adc, VGS 0 Vdc, dIS/dt = 100 A/µs) tb — 428 — Reverse Recovery Stored Charge QRR — 0.629 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD nH (Measured from contact screw on tab to center of die) — 3.5 — (Measured from the drain lead 0.25″ from package to center of die) — 4.5 — Internal Source Inductance LS — 7.5 — nH (Measured from the source lead 0.25″ from package to source bond pad) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 µAdc) 600 — — Vdc Temperature Coefficient (Positive) — 720 — mV/°C Zero Gate Voltage Drain Current IDSS µAdc (VDS = 600 Vdc, VGS = 0 Vdc) — — 10 (VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 100 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 µAdc) 2.0 3.2 4.0 Vdc Temperature Coefficient (Negative) — 6.0 — mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 0.5 Adc) RDS(on) — 5.9 8.0 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 1.0 Adc) — — 9.6 (ID = 0.5 Adc, TJ = 125°C) — — 8.4 Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc) gFS 0.5 0.8 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 224 310 pF (V 25 Vd V 0 Vd Output Capacitance DS = 25 Vdc, VGS = 0 Vdc, C f = 1.0 MHz f = 1.0 ) oss — 27 40 MHz) Reverse Transfer Capacitance Crss — 6.0 10
SWITCHING CHARACTERISTICS (2)
Turn−On Delay Time td(on) — 8.8 20 ns Rise Time (VDD = 300 Vdc, ID = 1.0 Adc, tr — 6.8 14 VGS V = 10 Vdc GS = 10 Vdc, Turn−Off Delay Time RG = 9.1 G 9.1 Ω ) t Ω) d(off) — 15 30 Fall Time tf — 20 40 Gate Charge QT — 7.1 11 nC (S Fi 8) (See Figure 8) (VDS = 400 Vdc, ID = 1.0 Adc, Q1 — 1.7 — (VDS 400 Vdc, ID 1.0 Adc, VGS = 10 Vdc) Q2 — 3.2 — Q3 — 3.9 —
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (1) V Vdc (I SD S = 1.0 Adc, VGS = 0 Vdc) — 0.82 1.4 (IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C) — 0.7 — Reverse Recovery Time trr — 464 — ns (S Fi 14) (See Figure 14) (IS = 1.0 Adc, VGS = 0 Vdc, ta — 36 — (IS 1.0 Adc, VGS 0 Vdc, dIS/dt = 100 A/µs) tb — 428 — Reverse Recovery Stored Charge QRR — 0.629 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD nH (Measured from contact screw on tab to center of die) — 3.5 — (Measured from the drain lead 0.25″ from package to center of die) — 4.5 — Internal Source Inductance LS — 7.5 — nH (Measured from the source lead 0.25″ from package to source bond pad) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data
