Datasheet AD8011 (Analog Devices) - 4

AD8011 ABSOLUTE MAXIMUM RATINGS1 MAXIMUM POWER DISSIPATION
Supply Voltage . 12.6 V The maximum power that can be safely dissipated by the AD8011 Internal Power Dissipation2 is limited by the associated rise in junction temperature. The Plastic DIP Package (N) . Observe Derating Curves maximum safe junction temperature for plastic encapsulated Small Outline Package (R) . Observe Derating Curves devices is determined by the glass transition temperature of the Input Voltage (Common Mode) . ± VS plastic, approximately 150°C. Exceeding this limit temporarily Differential Input Voltage . ± 2.5 V may cause a shift in parametric performance due to a change in Output Short-Circuit Duration the stresses exerted on the die by the package. Exceeding a . Observe Power Derating Curves junction temperature of 175°C for an extended period can result Storage Temperature Range (N, R) . –65°C to +125°C in device failure. Operating Temperature Range (A Grade) . –40°C to +85°C While the AD8011 is internally short-circuit protected, this may Lead Temperature Range (Soldering 10 sec) . 300°C not be sufficient to guarantee that the maximum junction tem- NOTES perature is not exceeded under all conditions. To ensure proper 1 Stresses above those listed under Absolute Maximum Ratings may cause perma- operation, it is necessary to observe the maximum power derating nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational curves (shown in Figure 3). section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
1k
⍀
1k
⍀ 2
V
Specification is for device in free air:
OUT RL
8-Lead PDIP Package: ␪JA = 90°C/W
1k
⍀ 8-Lead SOIC Package: ␪JA = 155°C/W
VIN +V 50
⍀
S 0.01
␮
F 10
␮
F 2.0 TJ = 150
ⴗ
C 0.01
␮
F 10
␮
F –VS 8-LEAD PLASTIC DIP PACKAGE
Figure 4. Test Circuit; Gain = +2
1.5 1k
⍀
1k
⍀
VIN VOUT 1.0 RL 52.3
⍀
1k
⍀
8-LEAD SOIC PACKAGE +VS 0.5 0.01
␮
F 10
␮
F MAXIMUM POWER DISSIPATION (W) 0.01
␮
F 10
␮
F –VS 0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
Figure 5. Test Circuit; Gain = –1
AMBIENT TEMPERATURE (
ⴗ
C)
Figure 3. Maximum Power Dissipation vs. Temperature
ORDERING GUIDE Temperature Package Package Model Range Description Option
AD8011AN –40°C to +85°C 8-Lead PDIP N-8 AD8011AR –40°C to +85°C 8-Lead SOIC R-8 AD8011AR-REEL –40°C to +85°C 13" Tape and Reel R-8 AD8011AR-REEL7 –40°C to +85°C 7" Tape and Reel R-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8011 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –4– REV. C Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM PRODUCT DESCRIPTION SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS MAXIMUM POWER DISSIPATION ORDERING GUIDE Typical Performance Characteristics THEORY OF OPERATION DC GAIN CHARACTERISTICS AC TRANSFER CHARACTERISTICS DRIVING CAPACITIVE LOADS OPTIMIZING FLATNESS INCREASING BW AT HIGH GAINS DRIVING A SINGLE-SUPPLY A/D CONVERTER LAYOUT CONSIDERATIONS OUTLINE DIMENSIONS Revision History