Datasheet IRLZ34N (International Rectifier) - 2
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 0.035 Ω, ID = 30 A, TO-220AB |
| Pages / Page | 9 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| File Format / Size | PDF / 112 Kb |
| Document Language | English |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
Text Version of Document
IRLZ34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.035 VGS = 10V, ID = 16A RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.046 Ω VGS = 5.0V, ID = 16A ––– ––– 0.060 VGS = 4.0V, ID = 14A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 11 ––– ––– S VDS = 25V, ID = 16A ––– ––– 25 VDS = 55V, VGS = 0V µA IDSS Drain-to-Source Leakage Current ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 25 ID = 16A Qgs Gate-to-Source Charge ––– ––– 5.2 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 8.9 ––– VDD = 28V tr Rise Time ––– 100 ––– ID = 16A ns td(off) Turn-Off Delay Time ––– 21 ––– RG = 6.5Ω, VGS = 5.0V tf Fall Time ––– 29 ––– RD = 1.8Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 880 ––– VGS = 0V Coss Output Capacitance ––– 220 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 94 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
I D S Continuous Source Current MOSFET symbol ––– ––– 30 (Body Diode) showing the A I G SM Pulsed Source Current integral reverse ––– ––– 110 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time ––– 76 110 ns TJ = 25°C, IF = 16A Qrr Reverse RecoveryCharge ––– 190 290 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by I ≤ ≤ SD 16A, di/dt ≤ 270A/µs, VDD V(BR)DSS, max. junction temperature. ( See fig. 11 ) T ≤ J 175°C VDD = 25V, starting TJ = 25°C, L = 610µH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 16A. (See Figure 12)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.035 VGS = 10V, ID = 16A RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.046 Ω VGS = 5.0V, ID = 16A ––– ––– 0.060 VGS = 4.0V, ID = 14A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 11 ––– ––– S VDS = 25V, ID = 16A ––– ––– 25 VDS = 55V, VGS = 0V µA IDSS Drain-to-Source Leakage Current ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 25 ID = 16A Qgs Gate-to-Source Charge ––– ––– 5.2 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 8.9 ––– VDD = 28V tr Rise Time ––– 100 ––– ID = 16A ns td(off) Turn-Off Delay Time ––– 21 ––– RG = 6.5Ω, VGS = 5.0V tf Fall Time ––– 29 ––– RD = 1.8Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 880 ––– VGS = 0V Coss Output Capacitance ––– 220 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 94 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
I D S Continuous Source Current MOSFET symbol ––– ––– 30 (Body Diode) showing the A I G SM Pulsed Source Current integral reverse ––– ––– 110 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time ––– 76 110 ns TJ = 25°C, IF = 16A Qrr Reverse RecoveryCharge ––– 190 290 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by I ≤ ≤ SD 16A, di/dt ≤ 270A/µs, VDD V(BR)DSS, max. junction temperature. ( See fig. 11 ) T ≤ J 175°C VDD = 25V, starting TJ = 25°C, L = 610µH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 16A. (See Figure 12)
