Datasheet IRLZ34N (International Rectifier) - 3
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 0.035 Ω, ID = 30 A, TO-220AB |
| Pages / Page | 9 / 3 — VGS. TOP 15V. 12V. 10V. 8.0V. 6.0V. 4.0V 3.0V. 4.0V. 3.0V. BOT TOM 2.5V. … |
| File Format / Size | PDF / 112 Kb |
| Document Language | English |
VGS. TOP 15V. 12V. 10V. 8.0V. 6.0V. 4.0V 3.0V. 4.0V. 3.0V. BOT TOM 2.5V. BOTT OM 2.5V. Fig 1. Fig 2. Fig 3. Fig 4
Text Version of Document
IRLZ34N 1000 1000
VGS VGS TOP 15V TOP 15V 12V 12V 10V 10V
)
8.0V
)
8.0V
A
6.0V
A
6.0V
t (
4.0V 3.0V
t (
4.0V
100 100 n n
3.0V BOT TOM 2.5V BOTT OM 2.5V
rre rre u u C C e e rc rc u 10 u 10 o o -S -S -to -to 2 .5V in in ra ra 1 2.5 V 1 , D , D I D I D 2 0µ s PU LSE W ID TH 20 µ s PU LSE W ID TH T J = 25 °C T = 1 75°C J 0.1 0.1 A A 0.1 1 10 100 0.1 1 10 100 V , Drain -to -S ou rce V oltag e (V) V , Dra in-to-So urce V olta ge (V ) D S D S
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1 0 0 0 3 . 0 e I D = 27 A c n ) ta A 2 . 5 is t ( s n e 1 0 0 T R J = 2 5 ° C rre n u 2 . 0 O C T J = 1 7 5° C e e rc ed) rc u u o liz 1 0 1 . 5 o -S a -S rm -to o -to in (N 1.0 in ra ra D 1 , D 0 . 5 D (on) I S V D DS = 2 5 V R 2 0 µ s P U L SE W ID TH V G = S 10 V 0 . 1 A 0 . 0 A 2 3 4 5 6 7 8 9 1 0 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 V G S , Ga te-to-S o urce V oltage (V ) T , Ju nctio n T emp eratu re (°C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
VGS VGS TOP 15V TOP 15V 12V 12V 10V 10V
)
8.0V
)
8.0V
A
6.0V
A
6.0V
t (
4.0V 3.0V
t (
4.0V
100 100 n n
3.0V BOT TOM 2.5V BOTT OM 2.5V
rre rre u u C C e e rc rc u 10 u 10 o o -S -S -to -to 2 .5V in in ra ra 1 2.5 V 1 , D , D I D I D 2 0µ s PU LSE W ID TH 20 µ s PU LSE W ID TH T J = 25 °C T = 1 75°C J 0.1 0.1 A A 0.1 1 10 100 0.1 1 10 100 V , Drain -to -S ou rce V oltag e (V) V , Dra in-to-So urce V olta ge (V ) D S D S
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1 0 0 0 3 . 0 e I D = 27 A c n ) ta A 2 . 5 is t ( s n e 1 0 0 T R J = 2 5 ° C rre n u 2 . 0 O C T J = 1 7 5° C e e rc ed) rc u u o liz 1 0 1 . 5 o -S a -S rm -to o -to in (N 1.0 in ra ra D 1 , D 0 . 5 D (on) I S V D DS = 2 5 V R 2 0 µ s P U L SE W ID TH V G = S 10 V 0 . 1 A 0 . 0 A 2 3 4 5 6 7 8 9 1 0 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 V G S , Ga te-to-S o urce V oltage (V ) T , Ju nctio n T emp eratu re (°C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
