Datasheet HIP2210, HIP2211 (Renesas) - 7
| Manufacturer | Renesas |
| Description | 100V, 3A Source, 4A Sink, High Frequency Half-Bridge Drivers with Tri-Level PWM Input and Adjustable Dead Time |
| Pages / Page | 28 / 7 — 2.3. Recommended Operating Conditions. Parameter (Note 5). Minimum. … |
| File Format / Size | PDF / 608 Kb |
| Document Language | English |
2.3. Recommended Operating Conditions. Parameter (Note 5). Minimum. Maximum. Units. 2.4. Electrical Specifications
Model Line for this Datasheet
Text Version of Document
link to page 11 link to page 11 link to page 6 HIP2210, HIP2211 2. Specifications
2.3 Recommended Operating Conditions Parameter (Note 5) Minimum Maximum Units
Supply Voltage, VDD +6 +18 V HI, LI, EN Inputs 0 VDD V PWM, VREF Inputs 0 +5.5 V Resistor on RDT pin to VSS for Programmable Dead Time +10 +100 kΩ Boot Voltage, HB Referenced to HS VDD - 1 +18 V Bootstrap Voltage, HB - +115 V Continuous Voltage on HS The greater of +100 V [-10 or -(20 - VDD)] HS Slew Rate <50 V/ns Temperature -40°C +125 °C
2.4 Electrical Specifications
VDD = HB = EN = 12V; VSS = HS = 0V; HI = LI = 0; VREF = 5V; PWM = 2.5V. No load on LO or HO, unless otherwise specified.
Boldface limits apply across the operating temperature range, -40°C to +125°C. Min Max Parameters Symbol Test Conditions (Note 11) Typ (Note 11 ) Units Supply Currents (HIP2211)
VDD Quiescent Current IDDQ HI = LI = 0 - 390
628
µA VDD Operating Current IDDO fSW = 500kHz; HI = LI = 50% square - 1.5
1.69
mA wave to VDD HB to HS Quiescent Current IHBQ HI = 1; LI = 0 - 370
475
µA HB to HS Operating Current IHBO fSW = 500kHz; HI = LI = 50% square - 1.4
1.6
mA wave to VDD HB to VSS Current, Operating IHBSO fSW = 500kHz; HI = LI =50% square - 88
110
µA wave to VDD; VHB = 115V; VHS = 100V HB to VSS Leakage Current IHBS HI = LI = 0; VHB = V HS = 100V - 29
47
µA
Supply Currents (HIP2210)
VDD Quiescent Current IDDQ PWM = 0.5 x VREF; EN = 1; - 455
700
µA RDT = 1kΩ; 100kΩ VDD Quiescent Current IDDQ PWM = 0.5 x VREF; EN = 1; - 800
1000
µA RDT = 10kΩ VDD Operating Current IDDO fSW = 500kHz; PWM = 50% square - 2
2.32
mA wave to VREF; RDT = 10kΩ VDD Disabled Current IDDSD EN = 0; RDT = 1kΩ; 100kΩ - 440
580
µA VDD Disabled Current IDDSD EN = 0; RDT = 10kΩ - 780
900
µA HB to HS Quiescent Current IHBQ PWM = VREF; EN = 1 - 370
475
µA HB to HS Operating Current IHBO fSW = 500kHz; PWM = 50% square - 1.7
2
mA wave to VREF; RDT = 100kΩ HB to VSS Current, Operating IHBSO fSW = 500kHz; PWM = 50% square - 95
126
µA wave to VREF; VHB = 115V; VHS = 100V; RDT = 100kΩ HB to VSS Leakage Current IHBS PWM = 0.5 x VREF; - 28
52
µA VHB = VHS = 100V FN9347 Rev.1.01 Page 7 of 27 Jun.23.20 Document Outline Related Literature Features Applications Contents 1. Overview 1.1 Block Diagrams 1.2 Ordering Information 1.3 Pin Configurations 1.4 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Information 2.3 Recommended Operating Conditions 2.4 Electrical Specifications 2.5 Switching Specifications 2.6 Timing Diagrams 3. Typical Performance Curves 4. Functional Description 4.1 Gate Drive for NMOS Half-Bridge 4.2 Functional Overview 5. Applications Information 5.1 HI/LI Input Control (HIP2211 Only) 5.2 PWM Input Control (HIP2210 Only) 5.3 VREF Input (HIP2210 Only) 5.4 EN Pin (HIP2210 Only) 5.5 Power Sequencing HIP2210 5.6 Selecting the Boot Capacitor Value 5.7 VDD Decoupling Capacitor 5.8 RDT and Dead Time Delay (HIP2210 Only) 5.9 HO and LO Outputs 5.10 Power Dissipation 5.10.1 Gate Power (for the HO and LO Outputs) 5.10.2 Boot Diode Dissipation 5.10.3 Dynamic Operating Current 5.10.4 Total Power Dissipation 5.10.5 Junction Operating Temperature 6. PCB Layout Guidelines 6.1 PCB Layout and EPAD Recommendation 7. Revision History 8. Package Outline Drawings
2.3 Recommended Operating Conditions Parameter (Note 5) Minimum Maximum Units
Supply Voltage, VDD +6 +18 V HI, LI, EN Inputs 0 VDD V PWM, VREF Inputs 0 +5.5 V Resistor on RDT pin to VSS for Programmable Dead Time +10 +100 kΩ Boot Voltage, HB Referenced to HS VDD - 1 +18 V Bootstrap Voltage, HB - +115 V Continuous Voltage on HS The greater of +100 V [-10 or -(20 - VDD)] HS Slew Rate <50 V/ns Temperature -40°C +125 °C
2.4 Electrical Specifications
VDD = HB = EN = 12V; VSS = HS = 0V; HI = LI = 0; VREF = 5V; PWM = 2.5V. No load on LO or HO, unless otherwise specified.
Boldface limits apply across the operating temperature range, -40°C to +125°C. Min Max Parameters Symbol Test Conditions (Note 11) Typ (Note 11 ) Units Supply Currents (HIP2211)
VDD Quiescent Current IDDQ HI = LI = 0 - 390
628
µA VDD Operating Current IDDO fSW = 500kHz; HI = LI = 50% square - 1.5
1.69
mA wave to VDD HB to HS Quiescent Current IHBQ HI = 1; LI = 0 - 370
475
µA HB to HS Operating Current IHBO fSW = 500kHz; HI = LI = 50% square - 1.4
1.6
mA wave to VDD HB to VSS Current, Operating IHBSO fSW = 500kHz; HI = LI =50% square - 88
110
µA wave to VDD; VHB = 115V; VHS = 100V HB to VSS Leakage Current IHBS HI = LI = 0; VHB = V HS = 100V - 29
47
µA
Supply Currents (HIP2210)
VDD Quiescent Current IDDQ PWM = 0.5 x VREF; EN = 1; - 455
700
µA RDT = 1kΩ; 100kΩ VDD Quiescent Current IDDQ PWM = 0.5 x VREF; EN = 1; - 800
1000
µA RDT = 10kΩ VDD Operating Current IDDO fSW = 500kHz; PWM = 50% square - 2
2.32
mA wave to VREF; RDT = 10kΩ VDD Disabled Current IDDSD EN = 0; RDT = 1kΩ; 100kΩ - 440
580
µA VDD Disabled Current IDDSD EN = 0; RDT = 10kΩ - 780
900
µA HB to HS Quiescent Current IHBQ PWM = VREF; EN = 1 - 370
475
µA HB to HS Operating Current IHBO fSW = 500kHz; PWM = 50% square - 1.7
2
mA wave to VREF; RDT = 100kΩ HB to VSS Current, Operating IHBSO fSW = 500kHz; PWM = 50% square - 95
126
µA wave to VREF; VHB = 115V; VHS = 100V; RDT = 100kΩ HB to VSS Leakage Current IHBS PWM = 0.5 x VREF; - 28
52
µA VHB = VHS = 100V FN9347 Rev.1.01 Page 7 of 27 Jun.23.20 Document Outline Related Literature Features Applications Contents 1. Overview 1.1 Block Diagrams 1.2 Ordering Information 1.3 Pin Configurations 1.4 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Information 2.3 Recommended Operating Conditions 2.4 Electrical Specifications 2.5 Switching Specifications 2.6 Timing Diagrams 3. Typical Performance Curves 4. Functional Description 4.1 Gate Drive for NMOS Half-Bridge 4.2 Functional Overview 5. Applications Information 5.1 HI/LI Input Control (HIP2211 Only) 5.2 PWM Input Control (HIP2210 Only) 5.3 VREF Input (HIP2210 Only) 5.4 EN Pin (HIP2210 Only) 5.5 Power Sequencing HIP2210 5.6 Selecting the Boot Capacitor Value 5.7 VDD Decoupling Capacitor 5.8 RDT and Dead Time Delay (HIP2210 Only) 5.9 HO and LO Outputs 5.10 Power Dissipation 5.10.1 Gate Power (for the HO and LO Outputs) 5.10.2 Boot Diode Dissipation 5.10.3 Dynamic Operating Current 5.10.4 Total Power Dissipation 5.10.5 Junction Operating Temperature 6. PCB Layout Guidelines 6.1 PCB Layout and EPAD Recommendation 7. Revision History 8. Package Outline Drawings
