NV6123650 V GaNFast™ Power IC2. Description The NV6123 is a thermally-enhanced version of the popular NV6113 650 V GaNFast™ power IC, optimized for high-frequency and soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital in, power out’ high performance powertrain building block, enabling designers to create the fastest, smallest, most efficient integrated QFN 6 x 8 mmSimplified schematic powertrain in the world. The highest dV/dt immunity, high-speed integrated drive and industry standard low-profile, low-inductance, 6 x 8 mm SMT QFN package allow designers to exploit 1. Features Navitas GaN technology with simple, quick, dependable GaNFast™ Power IC solutions for breakthrough power density and efficiency. • Thermally-enhanced version of NV6113 Navitas’ GaNFast™ power ICs extend the • Large cooling pad capabilities of traditional topologies such as flyback, • Enhanced thermals when using CS resistor half-bridge, resonant, etc. to MHz+ and enable the • Monolithically-integrated gate drive commercial introduction of breakthrough designs. • Wide VCC range (10 to 30 V) • 3. Topologies / Applications Programmable turn-on dV/dt • 200 V/ns dV/dt immunity • AC-DC, DC-DC, DC-AC • 650 V eMode GaN FET • Buck, boost, half bridge, full bridge • Low 300 mΩ resistance • Active Clamp Flyback, LLC resonant, Class D • • Zero reverse-recovery charge Quasi-Resonant Flyback • 2 MHz operation • Mobile fast chargers, adapters • Notebook adaptors Small, low-profile SMT QFN • LED lighting, solar micro-inverters • 6 x 8 mm footprint, 0.85 mm profile • TV / monitor, wireless power • Minimized package inductance • Server, telecom & networking SMPS Environmental • RoHS, Pb-free, REACH-compliant 4. Typical Application CircuitsDCIN(+)DCOUT(+)DCIN(+)DVCCPWM REG DVDD10V to 24VVCCDZHalf dV/dt PWM REG BridgeVDDDriverNV6123CPSDICZ dV/dt DVCCPWM REG VNV6123DDCPSDZ dV/dt 10V to 24VNV6123CPSDCDCIN(-)DCOUT(-)IN(-)PGNDBoostHalf-bridgeFinal Datasheet1Rev Nov 22, 2019