Datasheet NV6123 (Navitas Semiconductor) - 5
| Manufacturer | Navitas Semiconductor |
| Description | 650 V GaNFast Power IC |
| Pages / Page | 23 / 5 — NV6123. Electrical Characteristics. SYMBOL. PARAMETER. MIN. TYP. MAX … |
| File Format / Size | PDF / 2.4 Mb |
| Document Language | English |
NV6123. Electrical Characteristics. SYMBOL. PARAMETER. MIN. TYP. MAX UNITS. CONDITIONS. V Supply Characteristics
Model Line for this Datasheet
Text Version of Document
NV6123 Electrical Characteristics
Typical conditions: V = 400 V, V = 15 V, V = 6.2 V, F = 1 MHz, T = 25 ºC, I = 2.5 A, RDD = 10 Ω (or specified) DS CC DZ SW AMB D
SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS V Supply Characteristics CC
I V Quiescent Current 0.9 1.5 mA V = 0 V QCC CC PWM I V Operating Current 1.5 mA F = 1 MHz, V = Open QCC-SW CC SW DS
Low-Side Logic Input Characteristics
V Input Logic High Threshold (rising edge) 4 V PWMH V Input Logic Low Threshold (falling edge) 1 V PWML V Input Logic Hysteresis 0.5 V I-HYS T Turn-on Propagation Delay 11 ns Fig.1, Fig.2 ON T Turn-off Propagation Delay 9 ns Fig.1, Fig.2 OFF T Drain rise time 6 ns Fig.1, Fig.2 R T Drain fall time 3 ns Fig.1, Fig.2 F
Switching Characteristics
F Switching Frequency 2 MHz SW t Pulse width 0.02 1000 µs PW
GaN FET Characteristics
I Drain-Source Leakage Current 0.1 25 µA V = 650 V, V = 0 V DSS DS PWM I Drain-Source Leakage Current 3 50 µA V = 650 V, V = 0 V, T = 125 ºC DSS DS PWM C R Drain-Source Resistance 300 430 mΩ V = 6 V, I = 2.5 A DS(ON) PWM D R Drain-Source Resistance 621 mΩ V = 6 V, I = 2.5 A, T = 125 ºC DS(ON) PWM D C V Source-Drain Reverse Voltage 3.2 5 V V = 0 V, I = 2.5 A SD PWM SD Q Output Charge 10 nC V = 400 V, V = 0 V OSS DS PWM Q Reverse Recovery Charge 0 nC RR C Output Capacitance 12 pF V = 400 V, V = 0 V OSS DS PWM C (7) Effective Output Capacitance, Energy 16 pF V = 400 V, V = 0 V O(er) Related DS PWM C (8) Effective Output Capacitance, Time 25 pF V = 400 V, V = 0 V O(tr) Related DS PWM (7) C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 400 V O(er) OSS DS (8) C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 400 V O(tr) OSS DS
Final Datasheet 5 Rev Nov 22, 2019
Typical conditions: V = 400 V, V = 15 V, V = 6.2 V, F = 1 MHz, T = 25 ºC, I = 2.5 A, RDD = 10 Ω (or specified) DS CC DZ SW AMB D
SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS V Supply Characteristics CC
I V Quiescent Current 0.9 1.5 mA V = 0 V QCC CC PWM I V Operating Current 1.5 mA F = 1 MHz, V = Open QCC-SW CC SW DS
Low-Side Logic Input Characteristics
V Input Logic High Threshold (rising edge) 4 V PWMH V Input Logic Low Threshold (falling edge) 1 V PWML V Input Logic Hysteresis 0.5 V I-HYS T Turn-on Propagation Delay 11 ns Fig.1, Fig.2 ON T Turn-off Propagation Delay 9 ns Fig.1, Fig.2 OFF T Drain rise time 6 ns Fig.1, Fig.2 R T Drain fall time 3 ns Fig.1, Fig.2 F
Switching Characteristics
F Switching Frequency 2 MHz SW t Pulse width 0.02 1000 µs PW
GaN FET Characteristics
I Drain-Source Leakage Current 0.1 25 µA V = 650 V, V = 0 V DSS DS PWM I Drain-Source Leakage Current 3 50 µA V = 650 V, V = 0 V, T = 125 ºC DSS DS PWM C R Drain-Source Resistance 300 430 mΩ V = 6 V, I = 2.5 A DS(ON) PWM D R Drain-Source Resistance 621 mΩ V = 6 V, I = 2.5 A, T = 125 ºC DS(ON) PWM D C V Source-Drain Reverse Voltage 3.2 5 V V = 0 V, I = 2.5 A SD PWM SD Q Output Charge 10 nC V = 400 V, V = 0 V OSS DS PWM Q Reverse Recovery Charge 0 nC RR C Output Capacitance 12 pF V = 400 V, V = 0 V OSS DS PWM C (7) Effective Output Capacitance, Energy 16 pF V = 400 V, V = 0 V O(er) Related DS PWM C (8) Effective Output Capacitance, Time 25 pF V = 400 V, V = 0 V O(tr) Related DS PWM (7) C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 400 V O(er) OSS DS (8) C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 400 V O(tr) OSS DS
Final Datasheet 5 Rev Nov 22, 2019
