Datasheet RH119 (Analog Devices) - 2

RH119
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 2) TA = 25
˚
C SUB-
−
55
˚
C
≤
TA
≤
125
˚
C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage VS = ±15V, VCM = 0V 4 1 mV 3 7 2, 3 mV CMRR Common Mode 90 1 dB Rejection Ratio IOS Input Offset Current 3 75 1 100 2, 3 nA IB Input Bias Current 500 1 1000 2, 3 nA AV Voltage Gain 10 4 V/mV tR Response Time 4 80 200 4 200 5, 6 ns VSAT Saturation Voltage VIN ≤ −5mV, IO = 25mA 1.5 1 V V+ ≥ 4.5V, V− = 0V VIN ≤ 6mV, ISINK ≤ 3.2mA TA ≥ 0˚C 0.4 1 0.4 2 V TA ≤ 0˚C 0.6 3 V Output Leakage Current VIN ≥ 5mV, VOUT to V− = 35V 2 1 10 2, 3 µA Input Voltage Range VS = ±15V −12 12 1 12 2, 3 V V+ = 5V, V− = 0V 1 3 1 3 2, 3 V Differential Input Voltage ±5 1 ±5 2, 3 V IS Supply Current V+ = 5V, V− = 0V 4.3 mA Positive Supply Current VS = ±15V 11.5 1 mA Negative Supply Current VS = ±15V 4.5 1 mA
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 5) 10Krad(Si) 20Krad(Si) 50Krad(Si) 100Krad(Si) 200Krad(Si SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Offset Voltage 4 4 4 4 8 mV IOS Input Offset Current 3 75 100 150 300 500 nA IB Input Bias Current 3 500 750 1000 1500 2000 nA AVOL Large-Signal Voltage Gain 10 10 10 10 5 V/mV VSAT Saturation Voltage VIN ≤ −5mV, IO = 25mA 1.5 1.5 1.5 1.5 1.5 V V+ ≥ 4.5V, V− = 0V 0.4 0.4 0.4 0.4 0.4 V VIN ≤ −6mV, ISINK ≤ 3.2mA CMRR Common Mode Rejection 90 90 90 90 90 dB Ratio IS Positive Supply Current VS = ±15V 11.5 11.5 11.5 11.5 11.5 mA Negative Supply Current VS = ±15V 4.5 4.5 4.5 4.5 4.5 mA Output Leakage Current VIN ≥ 5mV, 2 2 2 2 2 µA VOUT to V− = 35V I.D.No.66-10-0176 Rev. D 2 For more information www.analog.com Document Outline Description Burn-In Circuit Package/Order Information Absolute Maximum Ratings Table 1: Electrical Characteristics Table 1A: Electrical Characteristics Electrical Characteristics Table 2: Electrical Test Requirements Total Dose Bias Circuit Revision History