Datasheet IR53HD420, IR53H420 (Infineon) - 5
| Manufacturer | Infineon |
| Description | Self-Oscillating Half Bridge |
| Pages / Page | 8 / 5 — IR53H(D)420. Electrical Characteristics. Low Voltage Supply … |
| File Format / Size | PDF / 72 Kb |
| Document Language | English |
IR53H(D)420. Electrical Characteristics. Low Voltage Supply Characteristics. Symbol Definition. Min
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IR53H(D)420 Electrical Characteristics
VBIAS (VCC, VBS) = 12V, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM.
Low Voltage Supply Characteristics Symbol Definition Min. Typ. Max. Units Test Conditions
VCCUV+ Rising VCC undervoltage lockout threshold 8.1 9.0 9.9 VCCUV- Falling VCC undervoltage lockout threshold 7.2 8.0 8.8 V VCCUVH VCC undervoltage lockout Hysteresis 0.5 1.0 1.5 IQCCUV Micropower startup VCC supply current — 75 150 VCC ≤ VCCUV- µA IQCC Quiescent VCC supply current — 500 950 VCLAMP VCC zener clamp voltage 14.4 15.6 16.8 V ICC = 5mA
Floating Supply Characteristics Symbol Definition Min. Typ. Max. Units Test Conditions
IQBSUV Micropower startup VBS supply current — 0 10 VCC ≤ VCCUV- µA IQBS Quiescent VBS supply current — 30 50 VBSMIN Minimum required VBS voltage for proper — 4.0 5.0 V VCC=VCCUV+ + 0.1V functionality from RT to HO IOS Offset supply leakage current — — 50 µA VB = VS = 600V VF Bootstrap diode forward voltage (IR2153D) 0.5 — 1.0 V IF = 250mA
Oscillator I/O Characteristics Symbol Definition Min. Typ. Max. Units Test Conditions
fosc Oscillator frequency 19.4 20 20.6 RT = 36.9kΩ kHz 94 100 106 RT = 7.43kΩ d RT pin duty cycle 48 50 52 % fo < 100kHz ICT CT pin current — 0.001 1.0 uA ICTUV UV-mode CT pin pulldown current 0.30 0.70 1.2 mA VCC = 7V VCT+ Upper CT ramp voltage threshold — 8.0 — VCT- Lower CT ramp voltage threshold — 4.0 — V VCTSD CT voltage shutdown threshold 1.8 2.1 2.4 VRT+ High-level RT output voltage, VCC - VRT — 10 50 IRT = 100µA — 100 300 IRT = 1mA VRT- Low-level RT output voltage — 10 50 IRT = 100µA — 100 300 IRT = 1mA mV VRTUV UV-mode RT output voltage — 0 100 VCC ≤ VCCUV- VRTSD SD-Mode RT output voltage, VCC - VRT — 10 50 IRT = 100µA, VCT = 0V — 10 300 IRT = 1mA, VCT = 0V www.irf.com 5
VBIAS (VCC, VBS) = 12V, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM.
Low Voltage Supply Characteristics Symbol Definition Min. Typ. Max. Units Test Conditions
VCCUV+ Rising VCC undervoltage lockout threshold 8.1 9.0 9.9 VCCUV- Falling VCC undervoltage lockout threshold 7.2 8.0 8.8 V VCCUVH VCC undervoltage lockout Hysteresis 0.5 1.0 1.5 IQCCUV Micropower startup VCC supply current — 75 150 VCC ≤ VCCUV- µA IQCC Quiescent VCC supply current — 500 950 VCLAMP VCC zener clamp voltage 14.4 15.6 16.8 V ICC = 5mA
Floating Supply Characteristics Symbol Definition Min. Typ. Max. Units Test Conditions
IQBSUV Micropower startup VBS supply current — 0 10 VCC ≤ VCCUV- µA IQBS Quiescent VBS supply current — 30 50 VBSMIN Minimum required VBS voltage for proper — 4.0 5.0 V VCC=VCCUV+ + 0.1V functionality from RT to HO IOS Offset supply leakage current — — 50 µA VB = VS = 600V VF Bootstrap diode forward voltage (IR2153D) 0.5 — 1.0 V IF = 250mA
Oscillator I/O Characteristics Symbol Definition Min. Typ. Max. Units Test Conditions
fosc Oscillator frequency 19.4 20 20.6 RT = 36.9kΩ kHz 94 100 106 RT = 7.43kΩ d RT pin duty cycle 48 50 52 % fo < 100kHz ICT CT pin current — 0.001 1.0 uA ICTUV UV-mode CT pin pulldown current 0.30 0.70 1.2 mA VCC = 7V VCT+ Upper CT ramp voltage threshold — 8.0 — VCT- Lower CT ramp voltage threshold — 4.0 — V VCTSD CT voltage shutdown threshold 1.8 2.1 2.4 VRT+ High-level RT output voltage, VCC - VRT — 10 50 IRT = 100µA — 100 300 IRT = 1mA VRT- Low-level RT output voltage — 10 50 IRT = 100µA — 100 300 IRT = 1mA mV VRTUV UV-mode RT output voltage — 0 100 VCC ≤ VCCUV- VRTSD SD-Mode RT output voltage, VCC - VRT — 10 50 IRT = 100µA, VCT = 0V — 10 300 IRT = 1mA, VCT = 0V www.irf.com 5
