Datasheet AD8553 (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | 1.8 V to 5 V Auto-Zero, In-Amp with Shutdown |
| Pages / Page | 20 / 4 — AD8553. Table 2. Parameter Symbol. Conditions. Min. Typ. Max. Unit |
| Revision | A |
| File Format / Size | PDF / 336 Kb |
| Document Language | English |
AD8553. Table 2. Parameter Symbol. Conditions. Min. Typ. Max. Unit
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AD8553
VS = 1.8 V, VCM = -0 V, VREF = VS/2, VIN = VINP − VINN, RLOAD = 10 kΩ, TA = 25°C, G = 100, unless specified. See Table 5 for gain setting resistor values. Temperature specifications guaranteed by characterization.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Input Offset Voltage VOS G = 1000 3 20 μV G = 100 3 20 μV G = 10 14 50 μV G = 1 130 375 μV Vs. Temperature ΔVOS/ΔT G = 1000, −40°C ≤ TA ≤ +85°C 0.02 0.25 μV/°C G = 100, −40°C ≤ TA ≤ +85°C 0.02 0.25 μV/°C G = 10, −40°C ≤ TA ≤ +85°C 0.1 3 μV/°C G = 1, −40°C ≤ TA ≤ +85°C 1 10 μV/°C Input Bias Current IB 0.05 1 nA −40°C ≤ TA ≤ +85°C 2 nA Input Offset Current IOS 2 nA VREF Pin Current IREF 0.02 1 nA Input Operating Impedance Differential 50||1 MΩ||pF Common Mode 10||10 GΩ||pF Input Voltage Range 0 0.15 V Common-Mode Rejection CMR G = 100, VCM = 0 V to 0.15 V, −40°C ≤ TA ≤ +85°C 100 110 dB G = 10, VCM = 0 V to 0.15 V, −40°C ≤ TA ≤ +85°C 90 110 dB Gain Error G = 100, VCM =4.125 mV, VO = 0.075 V to 1.725 V 0.2 0.4 % G = 10, VCM = 41.25 mV, VO = 0.075 V to 1.725 V 0.2 0.4 % Gain Drift G = 10, 100, 1000, −40°C ≤ TA ≤ +85°C 25 ppm/°C G = 1, −40°C ≤ TA ≤ +85°C 50 ppm/°C Nonlinearity G = 100, VCM = 4.125 mV, VO = 0.075 V to 1.725 V 0.003 % FS G = 10, VCM = 41.25 mV, VO = 0.075 V to 1.725 V 0.010 % FS VREF Range 0.8 1.0 V OUTPUT CHARACTERISITICS Output Voltage High VOH 1.725 V Output Voltage Low VOL 0.075 V Short-Circuit Current ISC ±5 mA POWER SUPPLY Power Supply Rejection PSR G = 100, VS = 1.8 V to 5.5 V, VCM = 0 V 100 120 dB Supply Current ISY IO = 0 mA, VIN = 0 V 0.8 1.2 mA −40°C ≤ TA ≤ +85°C 1.4 mA Supply Current Shutdown Mode ISD 2 4 μA ENABLE INPUTS Logic High Voltage 1.4 V Logic Low Voltage 0.5 V NOISE PERFORMANCE Voltage Noise en p-p f = 0.01 Hz to 10 Hz 0.7 μV p-p Voltage Noise Density en G = 100, f = 1 kHz 30 nV/√Hz G = 10, f = 1 kHz 150 nV/√Hz Internal Clock Frequency 60 kHz Signal Bandwidth1 G = 1 to 1000 1 kHz 1 Higher bandwidths result in higher noise. Rev. A | Page 4 of 20 Document Outline FEATURES APPLICATIONS PIN CONFIGURATION GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION HIGH PSR AND CMR 1/f NOISE CORRECTION APPLICATIONS GAIN SELECTION (GAIN-SETTING RESISTORS) REFERENCE CONNECTION DISABLE FUNCTION OUTPUT FILTERING CLOCK FEEDTHROUGH LOW IMPEDANCE OUTPUT MAXIMIZING PERFORMANCE THROUGH PROPER LAYOUT POWER SUPPLY BYPASSING INPUT OVERVOLTAGE PROTECTION CAPACITIVE LOAD DRIVE CIRCUIT DIAGRAMS/CONNECTIONS OUTLINE DIMENSIONS ORDERING GUIDE
AD8553
VS = 1.8 V, VCM = -0 V, VREF = VS/2, VIN = VINP − VINN, RLOAD = 10 kΩ, TA = 25°C, G = 100, unless specified. See Table 5 for gain setting resistor values. Temperature specifications guaranteed by characterization.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Input Offset Voltage VOS G = 1000 3 20 μV G = 100 3 20 μV G = 10 14 50 μV G = 1 130 375 μV Vs. Temperature ΔVOS/ΔT G = 1000, −40°C ≤ TA ≤ +85°C 0.02 0.25 μV/°C G = 100, −40°C ≤ TA ≤ +85°C 0.02 0.25 μV/°C G = 10, −40°C ≤ TA ≤ +85°C 0.1 3 μV/°C G = 1, −40°C ≤ TA ≤ +85°C 1 10 μV/°C Input Bias Current IB 0.05 1 nA −40°C ≤ TA ≤ +85°C 2 nA Input Offset Current IOS 2 nA VREF Pin Current IREF 0.02 1 nA Input Operating Impedance Differential 50||1 MΩ||pF Common Mode 10||10 GΩ||pF Input Voltage Range 0 0.15 V Common-Mode Rejection CMR G = 100, VCM = 0 V to 0.15 V, −40°C ≤ TA ≤ +85°C 100 110 dB G = 10, VCM = 0 V to 0.15 V, −40°C ≤ TA ≤ +85°C 90 110 dB Gain Error G = 100, VCM =4.125 mV, VO = 0.075 V to 1.725 V 0.2 0.4 % G = 10, VCM = 41.25 mV, VO = 0.075 V to 1.725 V 0.2 0.4 % Gain Drift G = 10, 100, 1000, −40°C ≤ TA ≤ +85°C 25 ppm/°C G = 1, −40°C ≤ TA ≤ +85°C 50 ppm/°C Nonlinearity G = 100, VCM = 4.125 mV, VO = 0.075 V to 1.725 V 0.003 % FS G = 10, VCM = 41.25 mV, VO = 0.075 V to 1.725 V 0.010 % FS VREF Range 0.8 1.0 V OUTPUT CHARACTERISITICS Output Voltage High VOH 1.725 V Output Voltage Low VOL 0.075 V Short-Circuit Current ISC ±5 mA POWER SUPPLY Power Supply Rejection PSR G = 100, VS = 1.8 V to 5.5 V, VCM = 0 V 100 120 dB Supply Current ISY IO = 0 mA, VIN = 0 V 0.8 1.2 mA −40°C ≤ TA ≤ +85°C 1.4 mA Supply Current Shutdown Mode ISD 2 4 μA ENABLE INPUTS Logic High Voltage 1.4 V Logic Low Voltage 0.5 V NOISE PERFORMANCE Voltage Noise en p-p f = 0.01 Hz to 10 Hz 0.7 μV p-p Voltage Noise Density en G = 100, f = 1 kHz 30 nV/√Hz G = 10, f = 1 kHz 150 nV/√Hz Internal Clock Frequency 60 kHz Signal Bandwidth1 G = 1 to 1000 1 kHz 1 Higher bandwidths result in higher noise. Rev. A | Page 4 of 20 Document Outline FEATURES APPLICATIONS PIN CONFIGURATION GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION HIGH PSR AND CMR 1/f NOISE CORRECTION APPLICATIONS GAIN SELECTION (GAIN-SETTING RESISTORS) REFERENCE CONNECTION DISABLE FUNCTION OUTPUT FILTERING CLOCK FEEDTHROUGH LOW IMPEDANCE OUTPUT MAXIMIZING PERFORMANCE THROUGH PROPER LAYOUT POWER SUPPLY BYPASSING INPUT OVERVOLTAGE PROTECTION CAPACITIVE LOAD DRIVE CIRCUIT DIAGRAMS/CONNECTIONS OUTLINE DIMENSIONS ORDERING GUIDE
