Datasheet SiSS94DN (Vishay) - 6
| Manufacturer | Vishay |
| Description | N-Channel 200 V (D-S) MOSFET |
| Pages / Page | 7 / 6 — SiSS94DN. TYPICAL CHARACTERISTICS. Notes. Normalized Thermal Transient … |
| File Format / Size | PDF / 195 Kb |
| Document Language | English |
SiSS94DN. TYPICAL CHARACTERISTICS. Notes. Normalized Thermal Transient Impedance, Junction-to-Ambient
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SiSS94DN
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 1 10000 Duty cycle = 0.5 ransient
Notes
1000 T 0.2 e v P pedance DM ne ne 0.1 m 0.1 ffecti l I t 1st li a 1 2nd li t ed E 0.05 2 z erm t 100 h 1 ali 1. Duty cycle, D = T t 0.02 2 rm 2. Per unit base = R = 65 °C/W o thJA N 3. T - T = P Z (t) JM A DM thJA Single pulse 4. Surface mounted 0.01 10 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title 1 10000 Duty cycle = 0.5 ent ransi 1000 T e v pedance ne ne 0.2 m ffecti l I 1st li a 2nd li ed E 0.1 z erm 100 h ali T 0.05 rm 0.02 o N Single pulse 0.1 10 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77350. S19-0849-Rev. A, 07-Oct-2019
6
Document Number: 77350 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 1 10000 Duty cycle = 0.5 ransient
Notes
1000 T 0.2 e v P pedance DM ne ne 0.1 m 0.1 ffecti l I t 1st li a 1 2nd li t ed E 0.05 2 z erm t 100 h 1 ali 1. Duty cycle, D = T t 0.02 2 rm 2. Per unit base = R = 65 °C/W o thJA N 3. T - T = P Z (t) JM A DM thJA Single pulse 4. Surface mounted 0.01 10 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title 1 10000 Duty cycle = 0.5 ent ransi 1000 T e v pedance ne ne 0.2 m ffecti l I 1st li a 2nd li ed E 0.1 z erm 100 h ali T 0.05 rm 0.02 o N Single pulse 0.1 10 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77350. S19-0849-Rev. A, 07-Oct-2019
6
Document Number: 77350 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
