Datasheet 2SK1828 (Toshiba)
| Manufacturer | Toshiba |
| Description | Field Effect Transistor Silicon N Channel MOS Type |
| Pages / Page | 5 / 1 — 2SK1828. Marking. Equivalent Circuit. Absolute Maximum Ratings (Ta. 25°C) |
| File Format / Size | PDF / 314 Kb |
| Document Language | English |
2SK1828. Marking. Equivalent Circuit. Absolute Maximum Ratings (Ta. 25°C)
Model Line for this Datasheet
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2SK1828 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1828
High Speed Switching Applications Unit: mm Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package
Marking Equivalent Circuit
JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F
Absolute Maximum Ratings (Ta
=
25°C)
Weight: 0.012 g (typ.) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V DC drain current ID 50 mA Drain power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. Start of commercial production 1991-02 1 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Marking Equivalent Circuit Absolute Maximum Ratings (Ta 25°C) Electrical Characteristics (Ta 25°C) Switching Time Test Circuit RESTRICTIONS ON PRODUCT USE
2SK1828
High Speed Switching Applications Unit: mm Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package
Marking Equivalent Circuit
JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F
Absolute Maximum Ratings (Ta
=
25°C)
Weight: 0.012 g (typ.) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V DC drain current ID 50 mA Drain power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. Start of commercial production 1991-02 1 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Marking Equivalent Circuit Absolute Maximum Ratings (Ta 25°C) Electrical Characteristics (Ta 25°C) Switching Time Test Circuit RESTRICTIONS ON PRODUCT USE
