Datasheet 2SK1828 (Toshiba) - 2
| Manufacturer | Toshiba |
| Description | Field Effect Transistor Silicon N Channel MOS Type |
| Pages / Page | 5 / 2 — Electrical Characteristics (Ta. 25°C). Switching Time Test Circuit |
| File Format / Size | PDF / 314 Kb |
| Document Language | English |
Electrical Characteristics (Ta. 25°C). Switching Time Test Circuit
Model Line for this Datasheet
Text Version of Document
2SK1828
Electrical Characteristics (Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 10 V, VDS = 0 ⎯ ⎯ 1 μA Drain-source breakdown voltage V (BR) DSS ID = 100 μA, VGS = 0 20 ⎯ ⎯ V Drain cut-off current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 10 mA 20 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ⎯ 20 40 Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 5.5 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 1.6 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 6.5 ⎯ pF Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V ⎯ 0.14 ⎯ Switching time μs Turn-off time toff VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V ⎯ 0.14 ⎯
Switching Time Test Circuit
2 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Marking Equivalent Circuit Absolute Maximum Ratings (Ta 25°C) Electrical Characteristics (Ta 25°C) Switching Time Test Circuit RESTRICTIONS ON PRODUCT USE
Electrical Characteristics (Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 10 V, VDS = 0 ⎯ ⎯ 1 μA Drain-source breakdown voltage V (BR) DSS ID = 100 μA, VGS = 0 20 ⎯ ⎯ V Drain cut-off current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 10 mA 20 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ⎯ 20 40 Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 5.5 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 1.6 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 6.5 ⎯ pF Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V ⎯ 0.14 ⎯ Switching time μs Turn-off time toff VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V ⎯ 0.14 ⎯
Switching Time Test Circuit
2 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Marking Equivalent Circuit Absolute Maximum Ratings (Ta 25°C) Electrical Characteristics (Ta 25°C) Switching Time Test Circuit RESTRICTIONS ON PRODUCT USE
