Datasheet SiZ240DT (Vishay) - 2
| Manufacturer | Vishay |
| Description | Dual N-Channel 40 V (D-S) MOSFETs |
| Pages / Page | 14 / 2 — SiZ240DT. SPECIFICATIONS. PARAMETER. SYMBOL. TEST CONDITIONS. MIN. TYP. … |
| File Format / Size | PDF / 339 Kb |
| Document Language | English |
SiZ240DT. SPECIFICATIONS. PARAMETER. SYMBOL. TEST CONDITIONS. MIN. TYP. MAX. UNIT. Static. Dynamic a
Model Line for this Datasheet
Text Version of Document
SiZ240DT
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
VGS = 0 V, ID = 250 μA Ch-1 40 - - Drain-source breakdown voltage VDS V VGS = 0 V, ID = 250 μA Ch-2 40 - - ID = 250 μA Ch-1 - 22 - VDS Temperature coefficient ΔVDS/TJ ID = 250 μA Ch-2 - 21 - mV/°C ID = 250 μA Ch-1 - -5.1 - VGS(th) Temperature coefficient ΔVGS(th)/TJ ID = 250 μA Ch-2 - -5.1 - VDS = VGS, ID = 250 μA Ch-1 1.1 - 2.4 Gate threshold voltage VGS(th) V VDS = VGS, ID = 250 μA Ch-2 1.1 - 2.4 VDS = 0 V, VGS = +20 V, -16 V Ch-1 - - ± 100 Gate source leakage IGSS nA VDS = 0 V, VGS = +20 V, -16 V Ch-2 - - ± 100 VDS = 40 V, VGS = 0 V Ch-1 - - 1 VDS = 40 V, VGS = 0 V Ch-2 - - 1 Zero gate voltage drain current IDSS μA VDS = 40 V, VGS = 0 V, TJ = 55 °C Ch-1 - - 5 VDS = 40 V, VGS = 0 V, TJ = 55 °C Ch-2 - - 5 VDS ≥ 5 V, VGS = 10 V Ch-1 10 - - On-state drain current b ID(on) A VDS ≥ 5 V, VGS = 10 V Ch-2 10 - - VGS = 10 V, ID = 10 A Ch-1 - 0.00671 0.00805 VGS = 10 V, ID = 10 A Ch-2 - 0.00701 0.00841 Drain-source on-state resistance b RDS(on) Ω VGS = 4.5 V, ID = 7 A Ch-1 - 0.00941 0.01225 VGS = 4.5 V, ID = 7 A Ch-2 - 0.01007 0.01330 VDS = 10 V, ID = 10 A Ch-1 - 39 - Forward transconductance b gfs S VDS = 10 V, ID = 10 A Ch-2 - 55 -
Dynamic a
Ch-1 - 1180 - Input capacitance Ciss Ch-2 - 1070 - Channel-1 Ch-1 - 230 - Output capacitance Coss V pF DS = 20 V, VGS = 0 V, f = 1 MHz Ch-2 - 170 - Channel-2 Ch-1 - 15 - Reverse transfer capacitance Crss VDS = 20 V, VGS = 0 V, f = 1 MHz Ch-2 - 20 - Ch-1 - 0.0130 0.0260 Crss/Ciss ratio Ch-2 - 0.0190 0.0380 VDS = 20 V, VGS = 10 V, ID = 10 A Ch-1 - 15.2 23 VDS = 20 V, VGS = 10 V, ID = 10 A Ch-2 - 14.2 22 Total gate charge Qg VDS = 20 V, VGS = 4.5 V, ID = 10 A Ch-1 - 6.9 11 VDS = 20 V, VGS = 4.5 V, ID = 10 A Ch-2 - 6.5 10 Channel-1 Ch-1 - 4.2 - Gate-source charge Qgs nC VDS = 20 V, VGS = 4.5 V, ID = 10 A Ch-2 - 3.9 - Channel-2 Ch-1 - 1 - Gate-drain charge Qgd VDS = 20 V, VGS = 4.5 V, ID = 10 A Ch-2 - 1 - Ch-1 - 8.3 - Output charge Qoss VDS = 20 V, VGS = 0 V Ch-2 - 9.5 - Ch-1 0.46 2.3 4.6 Gate resistance Rg f = 1 MHz Ω Ch-2 0.46 2.3 4.6 S19-1100-Rev. B, 30-Dec-2019
2
Document Number: 77182 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
VGS = 0 V, ID = 250 μA Ch-1 40 - - Drain-source breakdown voltage VDS V VGS = 0 V, ID = 250 μA Ch-2 40 - - ID = 250 μA Ch-1 - 22 - VDS Temperature coefficient ΔVDS/TJ ID = 250 μA Ch-2 - 21 - mV/°C ID = 250 μA Ch-1 - -5.1 - VGS(th) Temperature coefficient ΔVGS(th)/TJ ID = 250 μA Ch-2 - -5.1 - VDS = VGS, ID = 250 μA Ch-1 1.1 - 2.4 Gate threshold voltage VGS(th) V VDS = VGS, ID = 250 μA Ch-2 1.1 - 2.4 VDS = 0 V, VGS = +20 V, -16 V Ch-1 - - ± 100 Gate source leakage IGSS nA VDS = 0 V, VGS = +20 V, -16 V Ch-2 - - ± 100 VDS = 40 V, VGS = 0 V Ch-1 - - 1 VDS = 40 V, VGS = 0 V Ch-2 - - 1 Zero gate voltage drain current IDSS μA VDS = 40 V, VGS = 0 V, TJ = 55 °C Ch-1 - - 5 VDS = 40 V, VGS = 0 V, TJ = 55 °C Ch-2 - - 5 VDS ≥ 5 V, VGS = 10 V Ch-1 10 - - On-state drain current b ID(on) A VDS ≥ 5 V, VGS = 10 V Ch-2 10 - - VGS = 10 V, ID = 10 A Ch-1 - 0.00671 0.00805 VGS = 10 V, ID = 10 A Ch-2 - 0.00701 0.00841 Drain-source on-state resistance b RDS(on) Ω VGS = 4.5 V, ID = 7 A Ch-1 - 0.00941 0.01225 VGS = 4.5 V, ID = 7 A Ch-2 - 0.01007 0.01330 VDS = 10 V, ID = 10 A Ch-1 - 39 - Forward transconductance b gfs S VDS = 10 V, ID = 10 A Ch-2 - 55 -
Dynamic a
Ch-1 - 1180 - Input capacitance Ciss Ch-2 - 1070 - Channel-1 Ch-1 - 230 - Output capacitance Coss V pF DS = 20 V, VGS = 0 V, f = 1 MHz Ch-2 - 170 - Channel-2 Ch-1 - 15 - Reverse transfer capacitance Crss VDS = 20 V, VGS = 0 V, f = 1 MHz Ch-2 - 20 - Ch-1 - 0.0130 0.0260 Crss/Ciss ratio Ch-2 - 0.0190 0.0380 VDS = 20 V, VGS = 10 V, ID = 10 A Ch-1 - 15.2 23 VDS = 20 V, VGS = 10 V, ID = 10 A Ch-2 - 14.2 22 Total gate charge Qg VDS = 20 V, VGS = 4.5 V, ID = 10 A Ch-1 - 6.9 11 VDS = 20 V, VGS = 4.5 V, ID = 10 A Ch-2 - 6.5 10 Channel-1 Ch-1 - 4.2 - Gate-source charge Qgs nC VDS = 20 V, VGS = 4.5 V, ID = 10 A Ch-2 - 3.9 - Channel-2 Ch-1 - 1 - Gate-drain charge Qgd VDS = 20 V, VGS = 4.5 V, ID = 10 A Ch-2 - 1 - Ch-1 - 8.3 - Output charge Qoss VDS = 20 V, VGS = 0 V Ch-2 - 9.5 - Ch-1 0.46 2.3 4.6 Gate resistance Rg f = 1 MHz Ω Ch-2 0.46 2.3 4.6 S19-1100-Rev. B, 30-Dec-2019
2
Document Number: 77182 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
