Datasheet DMT47M2LDVQ (Diodes) - 4
| Manufacturer | Diodes |
| Description | Dual 40V N-Channel Enhancement Mode MOSFET PowerDI3333-8 |
| Pages / Page | 7 / 4 — DMT47M2LDVQ. www.diodes.com |
| File Format / Size | PDF / 498 Kb |
| Document Language | English |
DMT47M2LDVQ. www.diodes.com
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DMT47M2LDVQ
0.022 3 ) Ω( 0.02 ) E V C ( N 0.018 2.5 GE TA SI 0.016 TA S E OL 2 R 0.014 V = 4.5V, I = 10A V - GS D D I = 1mA D ON 0.012 OL E H 1.5 C S 0.01 R E R OU 0.008 S TH - V = 10V, I = 20A GS D 1 I = 250μA N E D I 0.006 A R GAT D 0.004 , ) H 0.5 N T( O( S S 0.002 G D V R 0 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (℃) T , JUNCTION TEMPERATURE (℃) J J Figure 7. On-Resistance Variation with Junction Figure 8. Gate Threshold Variation vs. Junction Temperature Temperature 20 10000 V = 0V GS f = 1MHz F) Ciss ) p( A 15 1000 ( E T C N N E R TAI Coss R C U A C 10 P 100 E A C C R ON OU TI S , C C 5 I S N 10 rss T = 85oC J T = 150oC U J J , T = 25oC T J T = 125oC C J T = -55oC J 0 1 0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 V , SOURCE-DRAIN VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) SD DS Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance 10 1000 RDS(ON) = 1µs Limited P = 10µs P W W 8 100 ) A( T 6 N 10 ) E V R ( R P = 100µs U W GSV C P = 1ms W 4 NI 1 A P = 10ms R W D T = 150℃ J(Max) V = 20V, I = 20A , DS D P = 100ms I D T = 25℃ C W 2 0.1 Single Pulse P = 1s W DUT on Infinite Heatsink V = 10V GS 0 0.01 0 3 6 9 12 15 0.1 1 10 100 Q (nC) V , DRAIN-SOURCE VOLTAGE (V) g DS Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area DMT47M2LDVQ 4 of 7 May 2019 Document number: DS41516 Rev. 2 - 2
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0.022 3 ) Ω( 0.02 ) E V C ( N 0.018 2.5 GE TA SI 0.016 TA S E OL 2 R 0.014 V = 4.5V, I = 10A V - GS D D I = 1mA D ON 0.012 OL E H 1.5 C S 0.01 R E R OU 0.008 S TH - V = 10V, I = 20A GS D 1 I = 250μA N E D I 0.006 A R GAT D 0.004 , ) H 0.5 N T( O( S S 0.002 G D V R 0 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (℃) T , JUNCTION TEMPERATURE (℃) J J Figure 7. On-Resistance Variation with Junction Figure 8. Gate Threshold Variation vs. Junction Temperature Temperature 20 10000 V = 0V GS f = 1MHz F) Ciss ) p( A 15 1000 ( E T C N N E R TAI Coss R C U A C 10 P 100 E A C C R ON OU TI S , C C 5 I S N 10 rss T = 85oC J T = 150oC U J J , T = 25oC T J T = 125oC C J T = -55oC J 0 1 0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 V , SOURCE-DRAIN VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) SD DS Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance 10 1000 RDS(ON) = 1µs Limited P = 10µs P W W 8 100 ) A( T 6 N 10 ) E V R ( R P = 100µs U W GSV C P = 1ms W 4 NI 1 A P = 10ms R W D T = 150℃ J(Max) V = 20V, I = 20A , DS D P = 100ms I D T = 25℃ C W 2 0.1 Single Pulse P = 1s W DUT on Infinite Heatsink V = 10V GS 0 0.01 0 3 6 9 12 15 0.1 1 10 100 Q (nC) V , DRAIN-SOURCE VOLTAGE (V) g DS Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area DMT47M2LDVQ 4 of 7 May 2019 Document number: DS41516 Rev. 2 - 2
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