Datasheet BLF989E, BLF989ES (Ampleon) - 6
| Manufacturer | Ampleon |
| Description | UHF power LDMOS transistor |
| Pages / Page | 12 / 6 — BLF989E; BLF989ES. UHF power LDMOS transistor. Table 9. List of … |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
BLF989E; BLF989ES. UHF power LDMOS transistor. Table 9. List of components. Component. Description. Value. Remarks. 7.3 Graphs
Model Line for this Datasheet
Text Version of Document
BLF989E; BLF989ES UHF power LDMOS transistor Table 9. List of components
…continued See Figure 1 for component layout.
Component Description Value Remarks
R24 chip resistor 18 SMD 1206 R27 chip resistor 2x510 SMD 1206 R28 chip resistor 2x180 SMD 1206 [1] American Technical Ceramics type 800B or capacitor of same quality.
7.3 Graphs 7.3.1 DVB-T in production test circuit
amp01393 amp01394 21 60 12 Gp G η η D D PA P R A PA (dB) (dB) (dB) (%) (%) (%) (dB) (dB) (dB) 20 50 Gp G 10 19 40 18 30 8 17 20 6 16 10 15 0 4 0 40 80 120 160 200 240 0 40 80 120 160 200 240 PL(AV) (W) PL(AV) (W) VDS = 50 V; IDq = 600 mA; measured in a Doherty VDS = 50 V; IDq = 600 mA; measured in a Doherty production test circuit at 550 MHz. production test circuit at 550 MHz.
Fig 2. Power gain and drain efficiency as function of Fig 3. Peak-to-average power ratio as a function of average output power; typical values average output power; typical values
BLF989E_BLF989ES All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 6 of 12
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in Doherty operation 7.2 Test circuit 7.3 Graphs 7.3.1 DVB-T in production test circuit 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents
…continued See Figure 1 for component layout.
Component Description Value Remarks
R24 chip resistor 18 SMD 1206 R27 chip resistor 2x510 SMD 1206 R28 chip resistor 2x180 SMD 1206 [1] American Technical Ceramics type 800B or capacitor of same quality.
7.3 Graphs 7.3.1 DVB-T in production test circuit
amp01393 amp01394 21 60 12 Gp G η η D D PA P R A PA (dB) (dB) (dB) (%) (%) (%) (dB) (dB) (dB) 20 50 Gp G 10 19 40 18 30 8 17 20 6 16 10 15 0 4 0 40 80 120 160 200 240 0 40 80 120 160 200 240 PL(AV) (W) PL(AV) (W) VDS = 50 V; IDq = 600 mA; measured in a Doherty VDS = 50 V; IDq = 600 mA; measured in a Doherty production test circuit at 550 MHz. production test circuit at 550 MHz.
Fig 2. Power gain and drain efficiency as function of Fig 3. Peak-to-average power ratio as a function of average output power; typical values average output power; typical values
BLF989E_BLF989ES All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 6 of 12
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in Doherty operation 7.2 Test circuit 7.3 Graphs 7.3.1 DVB-T in production test circuit 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents
