Datasheet XN04601 (Panasonic)

ManufacturerPanasonic
DescriptionSilicon NPN epitaxial planar type / Silicon PNP epitaxial planar type
Pages / Page6 / 1 — XN04601
File Format / SizePDF / 335 Kb
Document LanguageEnglish

XN04601

Datasheet XN04601 Panasonic

Model Line for this Datasheet

Text Version of Document

Composite Transistors
XN04601
(XN4601) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For general amplification 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) ■ Features 4 5 6 • Two elements incorporated into one package +0.25 –0.05 +0.2 –0.3 • Reduction of the mounting area and assembly cost by one half 2.8 ±0.2 1.50 5˚ 0.4 3 2 1 0.30+0.10 –0.05 ■ Basic Part Number (0.65) 0.50+0.10 –0.05 • 2SD0601A (2SD601A) + 2SB0709A (2SB709A) 10˚ ■ +0.2 –0.1 Absolute Maximum Ratings T +0.3 –0.1 a = 25°C 1.1 1.1 Parameter Symbol Rating Unit Tr1 Collector-base voltage V 1: Collector (Tr1) 0 to 0.1 4: Collector (Tr2) CBO 60 V (Emitter open) 2: Base (Tr2) 5: Base (Tr1) 3: Emitter (Tr2) 6: Emitter (Tr1) Collector-emitter voltage VCEO 50 V EIAJ: SC-74 Mini6-G1 Package (Base open) Marking Symbol: 5C Emitter-base voltage VEBO 7 V (Collector open) Internal Connection Collector current IC 100 mA 4 5 6 Peak collector current ICP 200 mA Tr2 Collector-base voltage V − CBO 60 V (Emitter open) Tr2 Tr1 Collector-emitter voltage V − CEO 50 V (Base open) 3 2 1 Maintenance/ Emitter-base voltage V − EBO 7 V (Collector open) Collector current I − C 100 mA Discontinued Peak collector current I − CP 200 mA Overall Total power dissipation PT 300 mW Junction temperature Tj 150 °C Maintenance/Discontinued includes following four Product lifecycle stage. Storage temperature T − stg 55 to +150 °C (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00083BED 1