Datasheet XN04601 (Panasonic) - 2

ManufacturerPanasonic
DescriptionSilicon NPN epitaxial planar type / Silicon PNP epitaxial planar type
Pages / Page6 / 2 — XN04601. ■. Electrical. Characteristics. Ta. =. 25°C. ±. 3°C. •. Tr1. …
File Format / SizePDF / 335 Kb
Document LanguageEnglish

XN04601. ■. Electrical. Characteristics. Ta. =. 25°C. ±. 3°C. •. Tr1. Parameter. Symbol. Conditions. Min. Typ. Max. Unit. Collector-base. voltage. (Emitter

XN04601 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter

Model Line for this Datasheet

Text Version of Document

XN04601 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) V EBO IE = 10 µA, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 160 460  Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA Forward current transfer ratio hFE VCE = −10 V, IC = −2 mA 160 460  Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −10 mA − 0.3 − 0.5 V Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Maintenance/ Discontinued Common characteristics chart PT  Ta 500 Maintenance/Discontinued includes following four Product lifecycle stage. ) 400 (mW T P (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) 300 200 100 Total power dissipation 0 0 40 80 120 160 Ambient temperature T (°C) a 2 SJJ00083BED