Datasheet T835H-8I (STMicroelectronics) - 3
| Manufacturer | STMicroelectronics |
| Description | 8 A - 800 V - 150°C 8H-Triac in TO-220AB insulated |
| Pages / Page | 11 / 3 — T835H-8I. Characteristics. Table 3. Static characteristics. Symbol. Test … |
| File Format / Size | PDF / 264 Kb |
| Document Language | English |
T835H-8I. Characteristics. Table 3. Static characteristics. Symbol. Test conditions. Value. Unit. Table 4. Thermal resistance
Model Line for this Datasheet
Text Version of Document
link to page 3 link to page 3 link to page 3
T835H-8I Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) ITM = 17 A, tp = 380 µs 25 °C Max. 1.50 V VTO (1) Threshold voltage 150 °C Max. 0.83 V R (1) D Dynamic resistance 150 °C Max. 45 mΩ 25 °C 1.5 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150°C 3.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 1.3 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 2.2 °C/W Rth(j-a) Junction to ambient Typ. 60 °C/W
DS13573
-
Rev 2 page 3/11
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB insulated package information 3 Ordering information Revision history
T835H-8I Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) ITM = 17 A, tp = 380 µs 25 °C Max. 1.50 V VTO (1) Threshold voltage 150 °C Max. 0.83 V R (1) D Dynamic resistance 150 °C Max. 45 mΩ 25 °C 1.5 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150°C 3.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 1.3 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 2.2 °C/W Rth(j-a) Junction to ambient Typ. 60 °C/W
DS13573
-
Rev 2 page 3/11
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB insulated package information 3 Ordering information Revision history
