Datasheet T835H-8I (STMicroelectronics) - 4

T835H-8I Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state Figure 2. On-state RMS current versus case temperature RMS current (full cycle) (full cycle)
P(W) IT(RMS)(A) 10 10 α = 180° 8 8 α = 180° 6 6 4 4 2 2 180° α α I T T(RMS)(A) c(°C) 0 0 0 2 4 6 8 0 25 50 75 100 125 150
Figure 3. On-state RMS current versus ambient Figure 4. On-state characteristics (maximum values) temperature (free air convection)
ITM(A) IT(RMS)(A) 100 3 Tj max. Vto = 0.83 V 2.5 R α = 180° d = 45 mΩ 2 Tj = 25 °C 10 1.5 Tj = 150 °C 1 0.5 Ta(°C) V 1 TM(V) 0 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Figure 6. Recommended maximum case-to-ambient Figure 5. Relative variation of thermal impedance versus thermal resistance versus ambient temperature for pulse duration different peak off-state voltages
K = [Zth/Rth] Rth(c-a) (°C/W) (for heatsink sizing to avoid thermal runaway) 1.0E+00 70 Junction-to-ambient thermal resistance: Typical 60 °C/W heatsink 60 Zth(j-c) V 50 D = V R = 400 V VD = V R = 600 V 40 V 1.0E-01 D = V R = 800 V Zth(j-a) 30 20 10 tp(s) With 15 ° C/W heatsink 1.0E-02 Ta (°C) 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 0 20 40 60 80 100 120 140
DS13573
-
Rev 2 page 4/11
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB insulated package information 3 Ordering information Revision history