Datasheet IRFP450, SiHFP450 (Vishay) - 2
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 11 / 2 — IRFP450, SiHFP450. THERMAL RESISTANCE RATINGS. PARAMETER SYMBOL. TYP. … |
| File Format / Size | PDF / 1.6 Mb |
| Document Language | English |
IRFP450, SiHFP450. THERMAL RESISTANCE RATINGS. PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. TEST. CONDITIONS. MIN. Static. Dynamic
Model Line for this Datasheet
Text Version of Document
IRFP450, SiHFP450
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - °C/W Maximum Junction-to-Case (Drain) RthJC - 0.65
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 500 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8.4 Ab - - 0.40 Ω Forward Transconductance gfs VDS = 50 V, ID = 8.4 Ab 9.3 - - S
Dynamic
Input Capacitance Ciss - 2600 - VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 720 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 340 - Total Gate Charge Qg - - 150 I Gate-Source Charge Qgs V D = 14 A, VDS = 400 V, GS = 10 V - - 20 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 80 Turn-On Delay Time td(on) - 17 - Rise Time tr - 47 - VDD = 250 V, ID = 14 A, ns Turn-Off Delay Time t R d(off) G = 6.2 Ω, RD = 17 Ω, see fig. 10b - 92 - Fall Time tf - 44 - D Internal Drain Inductance L Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH G Internal Source Inductance LS die contact - 13 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 14 showing the integral reverse A G Pulsed Diode Forward Currenta ISM p - n junction diode - - 56 S Body Diode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb - - 1.4 V Body Diode Reverse Recovery Time trr - 540 810 ns TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb Body Diode Reverse Recovery Charge Qrr - 4.8 7.2 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com Document Number: 91233 2 S-81271-Rev. A, 16-Jun-08
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - °C/W Maximum Junction-to-Case (Drain) RthJC - 0.65
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 500 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8.4 Ab - - 0.40 Ω Forward Transconductance gfs VDS = 50 V, ID = 8.4 Ab 9.3 - - S
Dynamic
Input Capacitance Ciss - 2600 - VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 720 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 340 - Total Gate Charge Qg - - 150 I Gate-Source Charge Qgs V D = 14 A, VDS = 400 V, GS = 10 V - - 20 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 80 Turn-On Delay Time td(on) - 17 - Rise Time tr - 47 - VDD = 250 V, ID = 14 A, ns Turn-Off Delay Time t R d(off) G = 6.2 Ω, RD = 17 Ω, see fig. 10b - 92 - Fall Time tf - 44 - D Internal Drain Inductance L Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH G Internal Source Inductance LS die contact - 13 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 14 showing the integral reverse A G Pulsed Diode Forward Currenta ISM p - n junction diode - - 56 S Body Diode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb - - 1.4 V Body Diode Reverse Recovery Time trr - 540 810 ns TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb Body Diode Reverse Recovery Charge Qrr - 4.8 7.2 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com Document Number: 91233 2 S-81271-Rev. A, 16-Jun-08
