Datasheet IRF7389PbF (Infineon) - 2

IRF7389PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions N-Ch 30 — — VGS = 0V, ID = 250µA V(BR)DSS Drain-to-Source Breakdown Voltage P-Ch -30 — — V VGS = 0V, ID = -250µA N-Ch — 0.022 — Reference to 25°C, ID = 1mA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient P-Ch — 0.022 — V/°C Reference to 25°C, ID = -1mA — 0.023 0.029 VGS = 10V, ID = 5.8A „ N-Ch — 0.0320.046 VGS = 4.5V, ID = 4.7A „ RDS(ON) Static Drain-to-Source On-Resistance — 0.042 0.058 Ω VGS = -10V, ID = -4.9A „ P-Ch — 0.0760.098 VGS = -4.5V, ID = -3.6A „ N-Ch 1.0 — — VDS = VGS, ID = 250µA VGS(th) Gate Threshold Voltage P-Ch -1.0 — — V VDS = VGS, ID = -250µA N-Ch — 14 — VDS = 15V, ID = 5.8A „ gfs Forward Transconductance P-Ch — 7.7 — S VDS = -15V, ID = -4.9A „ N-Ch — — 1.0 VDS = 24V, VGS = 0V P-Ch — — -1.0 VDS = -24V, VGS = 0V IDSS Drain-to-Source Leakage Current N-Ch — — 25V µA DS = 24V, VGS = 0V, TJ = 55°C P-Ch — — -25VDS = -24V, VGS = 0V, TJ = 55°C IGSS Gate-to-Source Forward Leakage N-P –– — ±100 nA VGS = ±20V N-Ch — 22 33 Qg Total Gate Charge P-Ch — 23 34 N-Channel N-Ch — 2.6 3.9 ID = 5.8A, VDS = 15V, VGS = 10V Qgs Gate-to-Source Charge P-Ch — 3.8 5.7 nC „ N-Ch — 6.4 9.6 P-Channel Qgd Gate-to-Drain ("Miller") Charge P-Ch — 5.9 8.9 ID = -4.9A, VDS = -15V, VGS = -10V N-Ch — 8.1 12 td(on) Turn-On Delay Time P-Ch — 13 19 N-Channel N-Ch — 8.9 13 VDD = 15V, ID = 1.0A, RG = 6.0Ω, tr Rise Time P-Ch — 13 20 RD = 15Ω N-Ch — 26 39 ns „ td(off) Turn-Off Delay Time P-Ch — 34 51 P-Channel N-Ch — 17 26 VDD = -15V, ID = -1.0A, RG = 6.0Ω, tf Fall Time P-Ch — 32 48 RD = 15Ω N-Ch — 650 — C N-Channel iss Input Capacitance P-Ch — 710 — VGS = 0V, VDS = 25V, ƒ = 1.0MHz N-Ch — 320 — pF Coss Output Capacitance P-Ch — 380 — P-Channel N-Ch — 130 — C VGS = 0V, VDS = -25V, ƒ = 1.0MHz rss Reverse Transfer Capacitance P-Ch — 180 —
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions N-Ch — — 2.5 IS Continuous Source Current (Body Diode) P-Ch — — -2.5 A N-Ch — — 30 ISM Pulsed Source Current (Body Diode)  P-Ch — — -30 N-Ch — 0.78 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V ƒ V V SD Diode Forward Voltage P-Ch — -0.78 -1.0 TJ = 25°C, IS = -1.7A, VGS = 0V ƒ N-Ch — 4568 t ns N-Channel rr Reverse Recovery Time P-Ch — 44 66 TJ = 25°C, IF =1.7A, di/dt = 100A/µs N-Ch — 58 87 P-Channel „ Q nC rr Reverse Recovery Charge P-Ch — 42 63 TJ = 25°C, IF = -1.7A, di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 22 ) ‚ N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C … Surface mounted on FR-4 board, t ≤ 10sec. P-Channel ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ƒ N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A. 2 www.irf.com