Datasheet 2SA1381, KSA1381 (Fairchild)
| Manufacturer | Fairchild |
| Description | PNP Epitaxial Silicon Transistor |
| Pages / Page | 6 / 1 — 2SA1381/KSA1381 — PNP Ep. 2SA1381/KSA1381 PNP Epitaxial Silicon … |
| File Format / Size | PDF / 171 Kb |
| Document Language | English |
2SA1381/KSA1381 — PNP Ep. 2SA1381/KSA1381 PNP Epitaxial Silicon Transistor. Applications. it axial Silico. Features. n T. ransistor
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Text Version of Document
2SA1381/KSA1381 — PNP Ep
March 2008
2SA1381/KSA1381 PNP Epitaxial Silicon Transistor Applications
• Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier
it axial Silico Features
• High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V 1 TO-126 • Excellent Gain Linearity for low THD 1. Emitter 2.Collector 3.Base • High Frequency: 150MHz • Full thermal and electrical Spice models are available
n T
• Complement to 2SC3503/KSC3503
ransistor Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter Ratings Units
BVCBO Collector-Base Voltage -300 V BVCEO Collector-Emitter Voltage -300 V BVEBO Emitter-Base Voltage -5 V IC Collector Current(DC) -100 mA ICP Collector Current(Pulse) -200 mA PC Total Device Dissipation, TC=25°C 7 W TC=125°C 1.2 W TJ, TSTG Junction and Storage Temperature - 55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Ta=25°C unless otherwise noted
Symbol Parameter Max. Units
RθJC Thermal Resistance, Junction to Case 17.8 °C/W * Device mounted on minimum pad size
hFE Classification
Classification C D E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1381/KSA1381 Rev. A1 1
March 2008
2SA1381/KSA1381 PNP Epitaxial Silicon Transistor Applications
• Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier
it axial Silico Features
• High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V 1 TO-126 • Excellent Gain Linearity for low THD 1. Emitter 2.Collector 3.Base • High Frequency: 150MHz • Full thermal and electrical Spice models are available
n T
• Complement to 2SC3503/KSC3503
ransistor Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter Ratings Units
BVCBO Collector-Base Voltage -300 V BVCEO Collector-Emitter Voltage -300 V BVEBO Emitter-Base Voltage -5 V IC Collector Current(DC) -100 mA ICP Collector Current(Pulse) -200 mA PC Total Device Dissipation, TC=25°C 7 W TC=125°C 1.2 W TJ, TSTG Junction and Storage Temperature - 55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Ta=25°C unless otherwise noted
Symbol Parameter Max. Units
RθJC Thermal Resistance, Junction to Case 17.8 °C/W * Device mounted on minimum pad size
hFE Classification
Classification C D E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1381/KSA1381 Rev. A1 1
