Datasheet BUK9V13-40H (Nexperia) - 7
| Manufacturer | Nexperia |
| Description | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) |
| Pages / Page | 13 / 7 — Nexperia. BUK9V13-40H. Dual N-channel 40 V, 13 mOhm logic level MOSFET in … |
| Revision | 11022021 |
| File Format / Size | PDF / 313 Kb |
| Document Language | English |
Nexperia. BUK9V13-40H. Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
Model Line for this Datasheet
Text Version of Document
Nexperia BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032344 60 aaa-032345 30 ID RD R S D o S n o (A) A 10 1 V (m ( Ω m ) 4. 4 5 5 V 25 48 3. 3 5 . 5 V 20 36 15 24 VGS = 3 3 V 10 12 2. 2 8 . 8 V 5 2. 2 6 . 6 V 0 0 0 1 2 3 4 0 4 8 12 16 20 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; ID = 10 A
Fig. 6. Output characteristics; drain current as a Fig. 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values, of gate-source voltage; typical values, FET1 and FET1 and FET2 FET2
aaa-032346 60 aaa-029502 10-1 ID ID (A) A (A ( ) A 48 10-2 36 10-3 Min Ty T p y Ma M x 24 10-4 12 17 1 5 7 °C ° 10-5 Tj = - 5 - 5° 5 C ° 25 2 ° 5 C ° 0 10-6 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 VGS (V) VGS (V) VDS = 8 V Tj = 25 °C; VDS = 5 V
Fig. 8. Transfer characteristics; drain current as a Fig. 9. Sub-threshold drain current as a function of function of gate-source voltage; typical values, gate-source voltage, FET1 and FET2 FET1 and FET2
BUK9V13-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 7 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
aaa-032344 60 aaa-032345 30 ID RD R S D o S n o (A) A 10 1 V (m ( Ω m ) 4. 4 5 5 V 25 48 3. 3 5 . 5 V 20 36 15 24 VGS = 3 3 V 10 12 2. 2 8 . 8 V 5 2. 2 6 . 6 V 0 0 0 1 2 3 4 0 4 8 12 16 20 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; ID = 10 A
Fig. 6. Output characteristics; drain current as a Fig. 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values, of gate-source voltage; typical values, FET1 and FET1 and FET2 FET2
aaa-032346 60 aaa-029502 10-1 ID ID (A) A (A ( ) A 48 10-2 36 10-3 Min Ty T p y Ma M x 24 10-4 12 17 1 5 7 °C ° 10-5 Tj = - 5 - 5° 5 C ° 25 2 ° 5 C ° 0 10-6 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 VGS (V) VGS (V) VDS = 8 V Tj = 25 °C; VDS = 5 V
Fig. 8. Transfer characteristics; drain current as a Fig. 9. Sub-threshold drain current as a function of function of gate-source voltage; typical values, gate-source voltage, FET1 and FET2 FET1 and FET2
BUK9V13-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 7 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
