Datasheet HMC8142 (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | 81 GHz to 86 GHz, E-Band Power Amplifier with Power Detector |
| Pages / Page | 16 / 4 — HMC8142. Data Sheet. ABSOLUTE MAXIMUM RATINGS. THERMAL RESISTANCE. Table … |
| Revision | A |
| File Format / Size | PDF / 319 Kb |
| Document Language | English |
HMC8142. Data Sheet. ABSOLUTE MAXIMUM RATINGS. THERMAL RESISTANCE. Table 2. Parameter. Rating. Table 3. Thermal Resistance
Model Line for this Datasheet
Text Version of Document
HMC8142 Data Sheet ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 2. Parameter Rating Table 3. Thermal Resistance
Drain Bias Voltage (V
1
DD1 to VDD4) 4.5 V
Package Type θJC Unit
Gate Bias Voltage (VGG1 to VGG4) −3 V to 0 V 25-Pad Bare Die [CHIP] 48.33 °C/W Maximum Junction Temperature (to 175°C 1 Based on ABLETHERM® 2600BT as die attach epoxy with thermal Maintain 1 Million Hours Mean Time to conductivity of 20 W/mK. Failure (MTTF)) Storage Temperature Range −65°C to +150°C
ESD CAUTION
Operating Temperature Range −55°C to +85°C Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. A | Page 4 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
Drain Bias Voltage (V
1
DD1 to VDD4) 4.5 V
Package Type θJC Unit
Gate Bias Voltage (VGG1 to VGG4) −3 V to 0 V 25-Pad Bare Die [CHIP] 48.33 °C/W Maximum Junction Temperature (to 175°C 1 Based on ABLETHERM® 2600BT as die attach epoxy with thermal Maintain 1 Million Hours Mean Time to conductivity of 20 W/mK. Failure (MTTF)) Storage Temperature Range −65°C to +150°C
ESD CAUTION
Operating Temperature Range −55°C to +85°C Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. A | Page 4 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
