Datasheet HMC-ABH241 (Analog Devices) - 3

HMC-ABH241
v03.0412
Gaas HEMT MMIC MEDIUM POWER amplifier, 50 - 66 GHz absolute Maximum Ratings
normal 5.0 V supply to GnD +5.5 Vdc Gate Bias Voltage -1 to +0.3 Vdc iP rf input Power (Vdd = +5.0 V) 2 dBm eLeCTrosTaTiC sensiTiVe DeViCe H oBserVe HanDLinG PreCaUTions storage Temperature -65 °C to + 150°C Max Peak Reflow Temperature +180 °C
Reliability Information
s - C r Junction Temperature to maintain +180 °C 1 million Hour mTTf ie normal Junction Temperature (T = +85 °C) +140.6 °C Lif Thermal resistance (Junction to Die +50.6 °C/w Bottom) P operating Temperature -55 °C to + 85°C m a r e
Outline Drawing
w o r & P a e Lin noTes: 1. aLL Dimensions are in inCHes [mm].
Die Packaging Information
[1] 2. TYPiCaL BonD PaD is .004” sQUare. 3. BaCKsiDe meTaLLiZaTion: GoLD. standard alternate 4. BaCKsiDe meTaL is GroUnD. GP-2 (Gel Pack) [2] 5. BonD PaD meTaLLiZaTion: GoLD. 6. ConneCTion noT reQUireD for UnLaBeLeD BonD PaDs. [1] Refer to the “Packaging Information” section for die 7. oVeraLL Die siZe ±.002” packaging dimensions. 8. Die THiCKness = 0.004” [2] For alternate packaging information contact Hittite Microwave Corporation. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
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