Datasheet HMC451 (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | GAAS PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz |
| Pages / Page | 6 / 4 — HMC451. GAAS PHEMT MMIC MEDIUM. POWER AMPLIFIER, 5 - 20 GHz. Absolute … |
| File Format / Size | PDF / 446 Kb |
| Document Language | English |
HMC451. GAAS PHEMT MMIC MEDIUM. POWER AMPLIFIER, 5 - 20 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd
Model Line for this Datasheet
Text Version of Document
HMC451
v04.0118
GAAS PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +5.5 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm +4.5 125 Channel Temperature 175 °C +5.0 127 IP Continuous Pdiss (T= 85 °C) 1.2 W +5.5 129 H (derate 13 mW/°C above 85 °C) Note: Amplifier will operate over full voltage ranges shown above Thermal Resistance 75 °C/W (channel to die bottom) Storage Temperature -65 to +150 °C R - C ELECTROSTATIC SENSITIVE DEVICE Operating Temperature -55 to +85 °C IE OBSERVE HANDLING PRECAUTIONS ESD Sensitivity (HBM) Class 1A, passed 250V LIF P
Outline Drawing
M R A E W O R & P A E LIN
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] Standard Alternate 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE GP-2 (Gel Pack) [2] 4. BACKSIDE METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 5. BOND PAD METALLIZATION: GOLD packaging dimensions. 6. BACKSIDE METAL IS GROUND. [2] For alternate packaging information contact Hittite 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Microwave Corporation. 8. OVERALL DIE SIZE ± .002 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
v04.0118
GAAS PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +5.5 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm +4.5 125 Channel Temperature 175 °C +5.0 127 IP Continuous Pdiss (T= 85 °C) 1.2 W +5.5 129 H (derate 13 mW/°C above 85 °C) Note: Amplifier will operate over full voltage ranges shown above Thermal Resistance 75 °C/W (channel to die bottom) Storage Temperature -65 to +150 °C R - C ELECTROSTATIC SENSITIVE DEVICE Operating Temperature -55 to +85 °C IE OBSERVE HANDLING PRECAUTIONS ESD Sensitivity (HBM) Class 1A, passed 250V LIF P
Outline Drawing
M R A E W O R & P A E LIN
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] Standard Alternate 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE GP-2 (Gel Pack) [2] 4. BACKSIDE METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 5. BOND PAD METALLIZATION: GOLD packaging dimensions. 6. BACKSIDE METAL IS GROUND. [2] For alternate packaging information contact Hittite 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Microwave Corporation. 8. OVERALL DIE SIZE ± .002 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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