Datasheet ADL8111 (Analog Devices)

ManufacturerAnalog Devices
Description10 MHz to 8000 MHz Bypass Amplifier
Pages / Page24 / 1 — 10 MHz to 8000 MHz Bypass Amplifier. Data Sheet. ADL8111. FEATURES. …
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Document LanguageEnglish

10 MHz to 8000 MHz Bypass Amplifier. Data Sheet. ADL8111. FEATURES. FUNCTIONAL BLOCK DIAGRAM

Datasheet ADL8111 Analog Devices

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10 MHz to 8000 MHz Bypass Amplifier Data Sheet ADL8111 FEATURES FUNCTIONAL BLOCK DIAGRAM A Small signal gain of 12.5 dB typical from 10 MHz to 500 MHz D T_ D D D _A D Broad operation from 10 MHz to 8000 MHz GN OU GN GN GN IN GN OIP3 of 34 dBm typical from 10 MHz to 500 MHz 28 27 26 25 24 23 22 Internal amplifier state, output P1dB of 17 dBm typical from VDD_PA ADL8111 5000 MHz to 8000 MHz 1 21 GND Noise figure of 2.8 dB typical from 10 MHz to 500 MHz 50Ω 50Ω VBIAS 2 20 GND Low insertion loss of 2 dB typical for the internal bypass GND 3 LNA 19 GND switch state from 10 MHz to 500 MHz RFIN 4 50Ω 50Ω 18 RFOUT Wide operating temperature range of −40°C to +85°C GND RoHS-compliant, 6 mm × 6 mm, 28-terminal LGA 5 17 GND 50Ω 50Ω ESD rating of ±750 V (Class 1B) VA 6 16 VDD_SW 50Ω 50Ω APPLICATIONS VB 7 15 VSS_SW Military 8 9 PACKAGE Test instrumentation 10 11 12 13 14 BASE D B D D D
1
_B D Communications T_
-00
GN GN GN GN IN GN GND
106
OU
20 Figure 1.
GENERAL DESCRIPTION
The ADL8111 is a low noise amplifier (LNA) with a nonreflective linearity values. The addition of switches also offers high input bypass switch that provides broadband operation from 10 MHz intercept performance and prevents distortion on the high to 8000 MHz. The ADL8111 provides a low noise figure of signal level applications. 2.8 dB with a high output third-order intercept (OIP3) of 34 dBm The ADL8111 has a high electrostatic discharge (ESD) rating of simultaneously, which delivers a high dynamic range. The ±750 V (Class 1B) and is fully specified for operation across a wide ADL8111 provides a gain of 12.5 dB that is stable over frequency, temperature range of −40°C to +85°C. The ADL8111 is offered temperature, power supply, and from device to device. in a 6 mm × 6 mm, 28-terminal land grid array (LGA) package. The integration of an amplifier and two single-pole, quad- throw (SP4T) nonreflective switches allows multiple gain and
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Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE POWER DERATING CURVES ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS EXTERNAL BYPASS A STATE INTERNAL AMPLIFIER STATE INTERNAL BYPASS STATE EXTERNAL BYPASS B STATE TEST CIRCUITS THEORY OF OPERATION SIGNAL PATH STATES FOR DIGITAL CONTROL INPUTS APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING During Power-Up During Power-Down EVALUATION PCB EVALUATION BOARD SCHEMATIC OUTLINE DIMENSIONS ORDERING GUIDE