Datasheet ADL8111 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 10 MHz to 8000 MHz Bypass Amplifier |
| Pages / Page | 24 / 3 — Data Sheet. ADL8111. SPECIFICATIONS. Table 1. Parameter. Test … |
| File Format / Size | PDF / 811 Kb |
| Document Language | English |
Data Sheet. ADL8111. SPECIFICATIONS. Table 1. Parameter. Test Conditions/Comments. Min. Typ. Max. Unit
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Data Sheet ADL8111 SPECIFICATIONS
Drain bias voltage (VDD_PA) = +5 V, quiescent drain supply current (IDQ_PA) = 70 mA, negative bias voltage (VSS_SW) = −3.3 V, positive bias voltage (VDD_SW) = +3.3 V, and TA = 25°C, unless otherwise noted.
Table 1. Parameter Test Conditions/Comments Min Typ Max Unit
OVERALL FUNCTION Frequency Range 10 5000 MHz INTERNAL AMPLIFIER STATE Small Signal Gain 11.2 12.5 dB Gain Flatness ±0.5 dB Input Return Loss 24 dB Output Return Loss 17 dB Radio Frequency (RF) Settling Time 50% VA/VB to 0.5 dB margin of final RFOUT 170 ns 50% VA/VB to 0.1 dB margin of final RFOUT 260 ns Switching Speed Rise Time (tRISE) and Fall Time (tFALL) 10% to 90% RFOUT 40 ns Turn On Time (tON) and Turn Off Time (tOFF) 50% VA/VB to 90%/10% RF 160 ns Output 1 dB Compression (P1dB) 17 19.5 dBm Output Third-Order Intercept (OIP3) 34 dBm Noise Figure 2.8 dB VDD_PA 3.0 5.0 5.5 V INTERNAL BYPASS SWITCH STATE Insertion Loss 2 dB RF Settling Time 50% VA/VB to 0.5 dB margin of final RFOUT 175 ns 50% VA/VB to 0.1 dB margin of final RFOUT 260 ns Switching Speed tRISE/tFALL 10% to 90% RFOUT 60 ns tON/tOFF 50% VA/VB to 90%/10% RF 160 ns Input Third-Order Intercept (IIP3) 58 dBm 0.5 dB Compression (P0.5dB) 34 dBm P1dB 35 dBm Return Loss On State 18 dB Return Loss Off State 30 dB VDD_SW 3.0 3.3 3.6 V VSS_SW −3.6 −3.3 −3.0 V EXTERNAL BYPASS A AND EXTERNAL BYPASS B STATES Insertion Loss 1 dB RF Settling Time 50% VA/VB to 0.5 dB margin of final RFOUT 180 ns 50% VA/VB to 0.1 dB margin of final RFOUT 230 ns Switching Speed tRISE/tFALL 10% to 90% RFOUT 70 ns tON/tOFF 50% VA/VB to 90%/10% RF 175 ns IIP3 59 dBm P0.5dB 35.5 dBm P1dB 36 dBm Return Loss On State 22 dB Return Loss Off State 25 dB VDD_SW 3.0 3.3 3.6 V VSS_SW −3.6 −3.3 −3.0 V Rev. 0 | Page 3 of 24 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE POWER DERATING CURVES ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS EXTERNAL BYPASS A STATE INTERNAL AMPLIFIER STATE INTERNAL BYPASS STATE EXTERNAL BYPASS B STATE TEST CIRCUITS THEORY OF OPERATION SIGNAL PATH STATES FOR DIGITAL CONTROL INPUTS APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING During Power-Up During Power-Down EVALUATION PCB EVALUATION BOARD SCHEMATIC OUTLINE DIMENSIONS ORDERING GUIDE
Drain bias voltage (VDD_PA) = +5 V, quiescent drain supply current (IDQ_PA) = 70 mA, negative bias voltage (VSS_SW) = −3.3 V, positive bias voltage (VDD_SW) = +3.3 V, and TA = 25°C, unless otherwise noted.
Table 1. Parameter Test Conditions/Comments Min Typ Max Unit
OVERALL FUNCTION Frequency Range 10 5000 MHz INTERNAL AMPLIFIER STATE Small Signal Gain 11.2 12.5 dB Gain Flatness ±0.5 dB Input Return Loss 24 dB Output Return Loss 17 dB Radio Frequency (RF) Settling Time 50% VA/VB to 0.5 dB margin of final RFOUT 170 ns 50% VA/VB to 0.1 dB margin of final RFOUT 260 ns Switching Speed Rise Time (tRISE) and Fall Time (tFALL) 10% to 90% RFOUT 40 ns Turn On Time (tON) and Turn Off Time (tOFF) 50% VA/VB to 90%/10% RF 160 ns Output 1 dB Compression (P1dB) 17 19.5 dBm Output Third-Order Intercept (OIP3) 34 dBm Noise Figure 2.8 dB VDD_PA 3.0 5.0 5.5 V INTERNAL BYPASS SWITCH STATE Insertion Loss 2 dB RF Settling Time 50% VA/VB to 0.5 dB margin of final RFOUT 175 ns 50% VA/VB to 0.1 dB margin of final RFOUT 260 ns Switching Speed tRISE/tFALL 10% to 90% RFOUT 60 ns tON/tOFF 50% VA/VB to 90%/10% RF 160 ns Input Third-Order Intercept (IIP3) 58 dBm 0.5 dB Compression (P0.5dB) 34 dBm P1dB 35 dBm Return Loss On State 18 dB Return Loss Off State 30 dB VDD_SW 3.0 3.3 3.6 V VSS_SW −3.6 −3.3 −3.0 V EXTERNAL BYPASS A AND EXTERNAL BYPASS B STATES Insertion Loss 1 dB RF Settling Time 50% VA/VB to 0.5 dB margin of final RFOUT 180 ns 50% VA/VB to 0.1 dB margin of final RFOUT 230 ns Switching Speed tRISE/tFALL 10% to 90% RFOUT 70 ns tON/tOFF 50% VA/VB to 90%/10% RF 175 ns IIP3 59 dBm P0.5dB 35.5 dBm P1dB 36 dBm Return Loss On State 22 dB Return Loss Off State 25 dB VDD_SW 3.0 3.3 3.6 V VSS_SW −3.6 −3.3 −3.0 V Rev. 0 | Page 3 of 24 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE POWER DERATING CURVES ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS EXTERNAL BYPASS A STATE INTERNAL AMPLIFIER STATE INTERNAL BYPASS STATE EXTERNAL BYPASS B STATE TEST CIRCUITS THEORY OF OPERATION SIGNAL PATH STATES FOR DIGITAL CONTROL INPUTS APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING During Power-Up During Power-Down EVALUATION PCB EVALUATION BOARD SCHEMATIC OUTLINE DIMENSIONS ORDERING GUIDE
