Datasheet HMC8325 (Analog Devices) - 3

Data Sheet HMC8325 SPECIFICATIONS
TA = 25°C, VDx (VD1 and VD2 to VD3 and VD4) = 3 V, unless otherwise noted.
Table 1. Parameter Min Typ Max Unit
OPERATING CONDITIONS Radio Frequency (RF) Range 71 86 GHz PERFORMANCE Gain 19.5 21 dB Gain Variation over Temperature 0.02 dB/°C Output Power for 1 dB Compression (P1dB) 13 dBm Saturated Output Power (P ) 17 dBm SAT Input Third-Order Intercept (IIP3) at Maximum Gain1 1 dBm Output Third-Order Intercept (OIP3) at Maximum Gain1 22 dBm Noise Figure 3.6 4.5 dB Return Loss Input 15 dB Output 17 dB POWER SUPPLY Total Drain Current (I )2 50 mA Dx 1 Data taken at power output (POUT) = 5 dBm/tone, 1 MHz spacing. 2 Adjust VG1 and VG2 to VG3 and VG4 from −2 V to 0 V to achieve a total drain current (IDx) = 50 mA. Rev. 0 | Page 3 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATION INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE